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Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiO<sub>x</sub> passivating contacts

Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiOx passivating contacts

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LINKE, Jonathan, Raphael GLATTHAAR, Frank HUSTER, Tobias OKKER, Sören MÖLLER, Giso HAHN, Barbara TERHEIDEN, 2022. Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiOx passivating contacts. In: Solar Energy Materials and Solar Cells. Elsevier. 246, 111890. ISSN 0927-0248. eISSN 1879-3398. Available under: doi: 10.1016/j.solmat.2022.111890

@article{Linke2022PolyS-58355, title={Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiOx passivating contacts}, year={2022}, doi={10.1016/j.solmat.2022.111890}, volume={246}, issn={0927-0248}, journal={Solar Energy Materials and Solar Cells}, author={Linke, Jonathan and Glatthaar, Raphael and Huster, Frank and Okker, Tobias and Möller, Sören and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 111890} }

Terheiden, Barbara 2022-08-22T09:36:42Z Huster, Frank Glatthaar, Raphael Huster, Frank Linke, Jonathan Okker, Tobias Glatthaar, Raphael Passivating contacts based on polycrystalline silicon on an interfacial oxide (poly-Si/SiO<sub>x</sub>) require a fine-tuned in-diffused dopant profile at the surface of the crystalline silicon wafer. In particular, a strong dopant in-diffusion causes excessive recombination. This study contributes to reveal the yet unclear mechanism of this degradation of passivation. Boron in-diffusion from co-sputtered (p) poly-Si layers through the interfacial oxide is investigated for several layer thicknesses and plateau temperatures during the solid phase crystallization. It is shown that for higher temperatures and unexpectedly also for thicker layers the observed recombination current density increases up to a total loss of passivation, accompanied by a physical interfacial oxide disruption, which is not observed for intrinsic reference layers. This behavior is supported by simple numerical calculations. The recombination current densities are transferred into the actual surface recombination velocity which in turn reveals an exponential increase towards higher boron concentrations at the interface between the oxide and the crystalline Si base. It is concluded that rather dopant penetration of the interfacial oxide is responsible for the degradation of passivation than the actual boron concentration at the interface itself as reported before in literature. Möller, Sören eng Poly-Si thickness and temperature dependent oxide disruption induced by penetration of the interfacial oxide in (p) poly-Si/SiO<sub>x</sub> passivating contacts Okker, Tobias Hahn, Giso 2022-08-22T09:36:42Z Terheiden, Barbara Linke, Jonathan Hahn, Giso terms-of-use 2022 Möller, Sören

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