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Type of Publication: | Journal article |
Publication status: | Published |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-2-12512okbuq18h5 |
Author: | Karalic, Matija; Štrkalj, Antonio; Masseroni, Michele; Chen, Wei; Mittag, Christopher; Tschirky, Thomas; Wegscheider, Werner; Ihn, Thomas; Ensslin, Klaus; Zilberberg, Oded |
Year of publication: | 2020 |
Published in: | Physical Review X ; 10 (2020), 3. - 031007. - American Physical Society (APS). - eISSN 2160-3308 |
ArXiv-ID: | arXiv:1911.00424 |
DOI (citable link): | https://dx.doi.org/10.1103/PhysRevX.10.031007 |
Summary: |
Electron optics in the solid state promises new functionality in electronics through the possibility of realizing nano- and micrometer-sized interferometers, lenses, collimators, and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p−n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Perot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p−n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics in two dimensions to encompass materials that exhibit band inversion and hybridization.
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Subject (DDC): | 530 Physics |
Link to License: | Attribution 4.0 International |
Refereed: | Unknown |
KARALIC, Matija, Antonio ŠTRKALJ, Michele MASSERONI, Wei CHEN, Christopher MITTAG, Thomas TSCHIRKY, Werner WEGSCHEIDER, Thomas IHN, Klaus ENSSLIN, Oded ZILBERBERG, 2020. Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer. In: Physical Review X. American Physical Society (APS). 10(3), 031007. eISSN 2160-3308. Available under: doi: 10.1103/PhysRevX.10.031007
@article{Karalic2020Elect-55218, title={Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer}, year={2020}, doi={10.1103/PhysRevX.10.031007}, number={3}, volume={10}, journal={Physical Review X}, author={Karalic, Matija and Štrkalj, Antonio and Masseroni, Michele and Chen, Wei and Mittag, Christopher and Tschirky, Thomas and Wegscheider, Werner and Ihn, Thomas and Ensslin, Klaus and Zilberberg, Oded}, note={Article Number: 031007} }
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