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Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers

Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers

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WINTER, Clemens, Jochen SIMON, Axel HERGUTH, 2021. Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers. In: Physica Status Solidi (A) - Applications and Materials Science. Wiley. 218(23), 2100220. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.202100220

@article{Winter2021-12Study-53889, title={Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers}, year={2021}, doi={10.1002/pssa.202100220}, number={23}, volume={218}, issn={1862-6300}, journal={Physica Status Solidi (A) - Applications and Materials Science}, author={Winter, Clemens and Simon, Jochen and Herguth, Axel}, note={Article Number: 2100220} }

Winter, Clemens Winter, Clemens Simon, Jochen Simon, Jochen terms-of-use Study on Boron‐Hydrogen Pairs in Bare and Passivated Float‐Zone Silicon Wafers 2021-12 Herguth, Axel Herguth, Axel This study deals with the dynamics of the formation and dissociation of boron-hydrogen (BH) pairs in crystalline silicon during a rapid high temperature treatment and subsequent dark annealing between 200°C and 300°C. Highly accurate resistivity measurements were used to detect BH pairs in chemically polished B-doped FZ-Si(ρ ≈ 1 Ω cm). An unexpectedly high amount of hydrogen is present in the as-purchased wafers. Hydrogen is initially mostly paired to boron but can be dissolved by a high temperature firing step. If a firing step with a peak temperature of around 530°C is applied to bare Si wafers, most of the initial BH pairs are dissolved and hydrogen dimers (H<sub>2</sub>) form. With increasing peak temperature, an increasing amount of hydrogen leaves the H<sub>2</sub> = BH system. The proportion of BH increases with decreasing total hydrogen content. Additional hydrogen can be introduced by firing a wafer passivated with PECVD SiN<sub>x</sub>:H. The mathematical description with a three-state-model shows a good agreement with the measured data for both bare and coated samples as well as for different annealing temperatures. With increasing dark annealing temperatures, the BH dynamics accelerates while the maximum BH concentration reached decreases. For temperatures above 280°C, significant changes in the reaction dynamics are observed. 2021-06-07T07:38:43Z 2021-06-07T07:38:43Z eng

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