Generation-Recombination Noise in Si-Doped AIN

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GOENNENWEIN, Sebastian T. B., Roland ZEISEL, Silvia BALDOVINO, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, 2001. Generation-Recombination Noise in Si-Doped AIN. ICNF 2001 : 16th International Conference on Noise in Physical Systems and 1/f Fluctuations. Gainesville, Florida, Oct 22, 2001 - Oct 25, 2001. In: BOSMAN, Gijs, ed.. Noise in physical systems and 1/f fluctuations ICNF 2001 : proceedings of the 16th International Conference. Singapore:World Scientific Pub. Co., pp. 69-72. ISBN 978-981-02-4677-8. Available under: doi: 10.1142/9789812811165_0015

@inproceedings{Goennenwein2001Gener-53559, title={Generation-Recombination Noise in Si-Doped AIN}, year={2001}, doi={10.1142/9789812811165_0015}, isbn={978-981-02-4677-8}, address={Singapore}, publisher={World Scientific Pub. Co.}, booktitle={Noise in physical systems and 1/f fluctuations ICNF 2001 : proceedings of the 16th International Conference}, pages={69--72}, editor={Bosman, Gijs}, author={Goennenwein, Sebastian T. B. and Zeisel, Roland and Baldovino, Silvia and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:rights>terms-of-use</dc:rights> <dc:creator>Brandt, Martin S.</dc:creator> <dc:creator>Stutzmann, Martin</dc:creator> <dc:creator>Goennenwein, Sebastian T. B.</dc:creator> <dc:contributor>Ambacher, Oliver</dc:contributor> <dcterms:isPartOf rdf:resource=""/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:language>eng</dc:language> <dc:contributor>Stutzmann, Martin</dc:contributor> <dcterms:title>Generation-Recombination Noise in Si-Doped AIN</dcterms:title> <bibo:uri rdf:resource=""/> <dc:date rdf:datatype="">2021-04-30T12:24:17Z</dc:date> <dcterms:available rdf:datatype="">2021-04-30T12:24:17Z</dcterms:available> <dc:creator>Baldovino, Silvia</dc:creator> <dcterms:issued>2001</dcterms:issued> <dc:contributor>Baldovino, Silvia</dc:contributor> <dspace:isPartOfCollection rdf:resource=""/> <dc:contributor>Goennenwein, Sebastian T. B.</dc:contributor> <dc:creator>Zeisel, Roland</dc:creator> <dcterms:rights rdf:resource=""/> <dc:creator>Ambacher, Oliver</dc:creator> <dcterms:abstract xml:lang="eng">We discuss non-thermal noise measurements in AlN:Si. The strong generation-recombination noise observed is shown to be linked to DX-centers. The transition energies for emission from and capture into the DX- ground state are derived from the noise measurements in terms of a simple two-level noise model. The validity of this model is critically discussed.</dcterms:abstract> <dc:contributor>Zeisel, Roland</dc:contributor> <dc:contributor>Brandt, Martin S.</dc:contributor> </rdf:Description> </rdf:RDF>

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