Complex DX-behavior of Si in AlGaN alloys

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GÖNNENWEIN, Sebastian T. B., Roland ZEISEL, Oliver AMBACHER, Martin S. BRANDT, Martin STUTZMANN, Uwe KARRER, Martin W. BAYERL, 2001. Complex DX-behavior of Si in AlGaN alloys. 25th International Conference on the Physics of Semiconductors. Osaka, Japan, Sep 17, 2000 - Sep 22, 2000. In: MIURA, Norio, ed., T. ANDO, ed.. Proceedings of the 25th International Conference on the Physics of Semiconductors Part II. Berlin:Springer, pp. 1597-1598. ISBN 978-3-540-41778-1

@inproceedings{Gonnenwein2001Compl-53558, title={Complex DX-behavior of Si in AlGaN alloys}, year={2001}, number={87}, isbn={978-3-540-41778-1}, address={Berlin}, publisher={Springer}, series={Springer proceedings in physics}, booktitle={Proceedings of the 25th International Conference on the Physics of Semiconductors Part II}, pages={1597--1598}, editor={Miura, Norio and Ando, T.}, author={Gönnenwein, Sebastian T. B. and Zeisel, Roland and Ambacher, Oliver and Brandt, Martin S. and Stutzmann, Martin and Karrer, Uwe and Bayerl, Martin W.} }

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