Type of Publication: | Journal article |
Publication status: | Published |
Author: | Gönnenwein, Sebastian T. B.; Bayerl, Martin W.; Brandt, Martin S.; Stutzmann, Martin |
Year of publication: | 2000 |
Published in: | Physical Review Letters ; 84 (2000), 22. - pp. 5188-5191. - American Physical Society (APS). - ISSN 0031-9007. - eISSN 1079-7114 |
Pubmed ID: | 10990899 |
DOI (citable link): | https://dx.doi.org/10.1103/PhysRevLett.84.5188 |
Summary: |
Spin-dependent changes in the noise power of undoped amorphous hydrogenated silicon ( a-Si:H) are observed under electron spin resonance conditions. The noise-detected magnetic resonance (NDMR) signal has the g value of holes in the valence band tail of a-Si:H. Both the sign of the NDMR signal and the frequency dependence of its intensity can be quantitatively accounted for by a resonant reduction of the generation-recombination noise time constant τ. This identifies hopping in the valence-band tail as the dominant spin-dependent step governing noise in this material
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Subject (DDC): | 530 Physics |
Refereed: | Yes |
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GÖNNENWEIN, Sebastian T. B., Martin W. BAYERL, Martin S. BRANDT, Martin STUTZMANN, 2000. Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance. In: Physical Review Letters. American Physical Society (APS). 84(22), pp. 5188-5191. ISSN 0031-9007. eISSN 1079-7114. Available under: doi: 10.1103/PhysRevLett.84.5188
@article{Gonnenwein2000-05-29Micro-52652, title={Microscopic Identification of the Origin of Generation-Recombination Noise in Hydrogenated Amorphous Silicon with Noise-Detected Magnetic Resonance}, year={2000}, doi={10.1103/PhysRevLett.84.5188}, number={22}, volume={84}, issn={0031-9007}, journal={Physical Review Letters}, pages={5188--5191}, author={Gönnenwein, Sebastian T. B. and Bayerl, Martin W. and Brandt, Martin S. and Stutzmann, Martin} }
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