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Dependencies Between poly-Si Composition and Solar Cell Performance of poly-Si/SiO<sub>x</sub> Passivating Contacts

Dependencies Between poly-Si Composition and Solar Cell Performance of poly-Si/SiOx Passivating Contacts

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STEFFENS, Jonathan, 2020. Dependencies Between poly-Si Composition and Solar Cell Performance of poly-Si/SiOx Passivating Contacts [Dissertation]. Konstanz: University of Konstanz

@phdthesis{Steffens2020Depen-51641, title={Dependencies Between poly-Si Composition and Solar Cell Performance of poly-Si/SiOx Passivating Contacts}, year={2020}, author={Steffens, Jonathan}, address={Konstanz}, school={Universität Konstanz} }

In this thesis, dependencies between incorporation of foreign elements in the poly-Si layer and solar cell performance of poly-Si/SiO<sub>x</sub> passivating contacts are explored. For both dopant polarities a difference in total and electrically active dopant concentrations is observed. If applied on the front side of a solar cell, poly-Si/SiO<sub>x</sub> contacts based on phosphorus doped poly-Si layers are rather limited by free carrier absorption and based on boron doped poly-Si layers are rather limited by detrimental strong dopant in-diffusion. Incorporation of the light elements oxygen, nitrogen and carbon widens the optical band gap and thus lowers parasitic absorption in the poly-Si layer at the expense of a higher resistivity. Both effects are mediated by a lower crystallinity compared to pure poly-Si layers without incorporated light elements. Therefore, the crystallinity was identified as key parameter for solar cell performance if applied on the front side of a solar cell. All investigated layer types yield an excellent passivation quality in terms of contact recombination current densities down to J<sub>c</sub> = 2.3 fA/cm<sup>2</sup> and selectivities up to S<sub>10</sub> = 15.2. The maximum achievable efficiency for an application of the investigated layers in an actual solar cell is estimated to 24.2% for a phosphorus doped poly-Si layer on the rear side and a boron doped poly-SiO<sub>x</sub>N<sub>y</sub> layer on the front side with thicknesses of 100 nm. This limit may be increased by 2%<sub>abs</sub> if the layer thicknesses are reduced to 30 nm. 2020 Dependencies Between poly-Si Composition and Solar Cell Performance of poly-Si/SiO<sub>x</sub> Passivating Contacts eng Steffens, Jonathan Steffens, Jonathan 2020-11-04T06:41:58Z 2020-11-04T06:41:58Z Attribution-NonCommercial-NoDerivatives 4.0 International

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