Type of Publication: | Journal article |
Publication status: | Published |
Author: | Mchedlidze, Teimuraz; Alam, Md Mahabubul; Herguth, Axel; Weber, Joerg |
Year of publication: | 2019 |
Published in: | Physica Status Solidi (A) - Applications and Materials Science ; 216 (2019), 17. - 1800918. - ISSN 1862-6300. - eISSN 1862-6319 |
DOI (citable link): | https://dx.doi.org/10.1002/pssa.201800918 |
Summary: |
Carrier‐induced efficiency degradation of multi‐crystalline Si (mc‐Si) solar cells is studied in situ by detecting the electroluminescence (EL) from the cells. Series of spatially resolved EL images of the cells during constant forward current operation at low (24 °C) and at elevated (70 °C) temperatures are recorded. The degradation induced changes in the open circuit voltage correlate well with changes in the EL intensities. The similarity of light‐induced and carrier‐induced degradation processes for mc‐Si cells is confirmed. The correlation of the degradation with the material structure is analyzed. The degradation appears to correlate with the density of structural defects in the cells. The results verify that EL images present a powerful tool for in situ analyses of mc‐Si cell degradation processes in various cell structures with a broad variety of biasing and temperature conditions.
|
Subject (DDC): | 530 Physics |
Bibliography of Konstanz: | Yes |
Refereed: | Yes |
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |
MCHEDLIDZE, Teimuraz, Md Mahabubul ALAM, Axel HERGUTH, Joerg WEBER, 2019. In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence. In: Physica Status Solidi (A) - Applications and Materials Science. 216(17), 1800918. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.201800918
@article{Mchedlidze2019-09Obser-47186, title={In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence}, year={2019}, doi={10.1002/pssa.201800918}, number={17}, volume={216}, issn={1862-6300}, journal={Physica Status Solidi (A) - Applications and Materials Science}, author={Mchedlidze, Teimuraz and Alam, Md Mahabubul and Herguth, Axel and Weber, Joerg}, note={Article Number: 1800918} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/47186"> <dc:creator>Alam, Md Mahabubul</dc:creator> <dcterms:title>In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence</dcterms:title> <dc:creator>Mchedlidze, Teimuraz</dc:creator> <dc:language>eng</dc:language> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Mchedlidze, Teimuraz</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-10-10T12:58:45Z</dcterms:available> <dcterms:issued>2019-09</dcterms:issued> <dc:contributor>Herguth, Axel</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/47186"/> <dcterms:abstract xml:lang="eng">Carrier‐induced efficiency degradation of multi‐crystalline Si (mc‐Si) solar cells is studied in situ by detecting the electroluminescence (EL) from the cells. Series of spatially resolved EL images of the cells during constant forward current operation at low (24 °C) and at elevated (70 °C) temperatures are recorded. The degradation induced changes in the open circuit voltage correlate well with changes in the EL intensities. The similarity of light‐induced and carrier‐induced degradation processes for mc‐Si cells is confirmed. The correlation of the degradation with the material structure is analyzed. The degradation appears to correlate with the density of structural defects in the cells. The results verify that EL images present a powerful tool for in situ analyses of mc‐Si cell degradation processes in various cell structures with a broad variety of biasing and temperature conditions.</dcterms:abstract> <dc:contributor>Alam, Md Mahabubul</dc:contributor> <dc:creator>Weber, Joerg</dc:creator> <dc:contributor>Weber, Joerg</dc:contributor> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-10-10T12:58:45Z</dc:date> <dc:creator>Herguth, Axel</dc:creator> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> </rdf:Description> </rdf:RDF>