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Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates

Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates

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HEILIG, Matthias, Josh ENGELHARDT, Giso HAHN, Barbara TERHEIDEN, 2019. Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates. SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York:AIP Publishing, 070004. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123865

@inproceedings{Heilig2019Compa-46997, title={Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates}, year={2019}, doi={10.1063/1.5123865}, number={2147, 1}, isbn={978-0-7354-1892-9}, address={Melville, New York}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium}, editor={Poortmans, Jef}, author={Heilig, Matthias and Engelhardt, Josh and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 070004} }

Heilig, Matthias 2019-09-20T09:15:27Z Terheiden, Barbara Heilig, Matthias 2019-09-20T09:15:27Z Terheiden, Barbara Comparison of laser-doped emitters from as-deposited and thermally diffused APCVD doping glasses on silicon substrates Hahn, Giso eng terms-of-use Engelhardt, Josh 2019 n this comparative study, atmospheric pressure chemical vapor deposited (APCVD) silicate glasses are used as a doping source for laser drive-in applied to mono-crystalline silicon under three conditions: First, laser drive-in from APCVD glasses after being heat treated in a tube furnace, i.e., after forming a shallow emitter; second, laser drive-in from as-deposited APCVD glasses newly deposited after removing the one used to form a shallow emitter; and third, laser drive-in from as-deposited APCVD layers directly on the Si wafer with only a base doping below 10<sup>16</sup> cm<sup>−3</sup>. We analyze sheet resistances and doping profiles after laser-doing of all three approaches within a wide laser parameter space, using APCVD phosphosilicate glass (PSG) and borosilicate glass (BSG) as doping sources. We found that in general, laser doping from as-deposited APCVD doping glasses creates higher surface doping concentrations compared to laser doping from thermally treated APCVD glasses. The presence of shallow emitters (170/146 Ω/□) before laser-doping leads to about 100–200 nm deeper doping profiles compared to laser-doping from glasses on the base substrate. With as-deposited APCVD layers, surface concentrations above 5 · 10<sup>19</sup> cm<sup>-3</sup> (P) and about 2 · 10<sup>19</sup> cm<sup>-3</sup> (B) allow for low-ohmic silver contacts. Low sheet resistances of about 18 Ω/□ (P) and 42 Ω/□ (B) are opening wider parameter windows for laser fluence reduction in order to avoid laser-induced defects compared to the application of heat treated APCVD glasses for laser drive in. Hahn, Giso Engelhardt, Josh

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