Role of thermal SiO2 on passivation of highly doped layer

Restricted until: Aug 31, 2020
Type of Publication: Contribution to a conference
Publication status: Published
URI (citable link): http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1bmrzjox3hif11
Author: Dastgheib-Shirazi, Amir; Hahn, Giso; Terheiden, Barbara
Year of publication: 2019
Conference: SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics, Apr 8, 2019 - Apr 10, 2019, Leuven, Belgium
Published in: SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium / Poortmans, Jef et al. (ed.). - Melville, New York : AIP Publishing, 2019. - (AIP Conference Proceedings ; 2147, 1). - 070001. - eISSN 0094-243X. - ISBN 978-0-7354-1892-9
DOI (citable link): https://dx.doi.org/10.1063/1.5123862
Summary:
In this paper we investigate the influence of thermal oxidation during and after POCl3 diffusion. The main focus here is on the question of how far the presence of a thermally grown oxide layer has an influence on the emitter passivation. For this purpose, characterization methods such as electrochemical capacitance-voltage measurements and QSSPC are used. The novel finding of this paper is that in the case of a stack of passivation layers, the presence of the thermal oxide does not make a significant contribution to improved emitter passivation.
Subject (DDC): 530 Physics
Bibliography of Konstanz: Yes

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DASTGHEIB-SHIRAZI, Amir, Giso HAHN, Barbara TERHEIDEN, 2019. Role of thermal SiO2 on passivation of highly doped layer. SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York:AIP Publishing, 070001. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862

@inproceedings{DastgheibShirazi2019therm-46996, title={Role of thermal SiO2 on passivation of highly doped layer}, year={2019}, doi={10.1063/1.5123862}, number={2147, 1}, isbn={978-0-7354-1892-9}, address={Melville, New York}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium}, editor={Poortmans, Jef}, author={Dastgheib-Shirazi, Amir and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 070001} }

Hahn, Giso Terheiden, Barbara eng Role of thermal SiO<sub>2</sub> on passivation of highly doped layer In this paper we investigate the influence of thermal oxidation during and after POCl<sub>3</sub> diffusion. The main focus here is on the question of how far the presence of a thermally grown oxide layer has an influence on the emitter passivation. For this purpose, characterization methods such as electrochemical capacitance-voltage measurements and QSSPC are used. The novel finding of this paper is that in the case of a stack of passivation layers, the presence of the thermal oxide does not make a significant contribution to improved emitter passivation. Dastgheib-Shirazi, Amir 2019 Dastgheib-Shirazi, Amir 2019-09-20T09:06:31Z Hahn, Giso 2019-09-20T09:06:31Z Terheiden, Barbara terms-of-use

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