Type of Publication: | Contribution to a conference collection |
Publication status: | Published |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1bmrzjox3hif11 |
Author: | Dastgheib-Shirazi, Amir; Hahn, Giso; Terheiden, Barbara |
Year of publication: | 2019 |
Conference: | SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics, Apr 8, 2019 - Apr 10, 2019, Leuven, Belgium |
Published in: | SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium / Poortmans, Jef et al. (ed.). - Melville, New York : AIP Publishing, 2019. - (AIP Conference Proceedings ; 2147, 1). - 070001. - eISSN 0094-243X. - ISBN 978-0-7354-1892-9 |
DOI (citable link): | https://dx.doi.org/10.1063/1.5123862 |
Summary: |
In this paper we investigate the influence of thermal oxidation during and after POCl3 diffusion. The main focus here is on the question of how far the presence of a thermally grown oxide layer has an influence on the emitter passivation. For this purpose, characterization methods such as electrochemical capacitance-voltage measurements and QSSPC are used. The novel finding of this paper is that in the case of a stack of passivation layers, the presence of the thermal oxide does not make a significant contribution to improved emitter passivation.
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Subject (DDC): | 530 Physics |
Link to License: | In Copyright |
Bibliography of Konstanz: | Yes |
DASTGHEIB-SHIRAZI, Amir, Giso HAHN, Barbara TERHEIDEN, 2019. Role of thermal SiO2 on passivation of highly doped layer. SiliconPV 2019 : The 9th International Conference on Crystalline Silicon Photovoltaics. Leuven, Belgium, Apr 8, 2019 - Apr 10, 2019. In: POORTMANS, Jef, ed. and others. SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium. Melville, New York:AIP Publishing, 070001. eISSN 0094-243X. ISBN 978-0-7354-1892-9. Available under: doi: 10.1063/1.5123862
@inproceedings{DastgheibShirazi2019therm-46996, title={Role of thermal SiO2 on passivation of highly doped layer}, year={2019}, doi={10.1063/1.5123862}, number={2147, 1}, isbn={978-0-7354-1892-9}, address={Melville, New York}, publisher={AIP Publishing}, series={AIP Conference Proceedings}, booktitle={SiliconPV 2019, The 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium}, editor={Poortmans, Jef}, author={Dastgheib-Shirazi, Amir and Hahn, Giso and Terheiden, Barbara}, note={Article Number: 070001} }
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