Defect analysis of APCVD gettered multicrystalline silicon
| Type of Publication: | Contribution to a conference collection |
| Publication status: | Published |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-2-12w8p592q4kmg3 |
| Author: | Fleck, Martin; Lindroos, Jeanette; Zuschlag, Annika; Hahn, Giso |
| Year of publication: | 2018 |
| Conference: | 35th European Photovoltaic Solar Energy Conference and Exhibition, Sep 24, 2018 - Oct 28, 2018, Brussels |
| Published in: | 35th European Photovoltaic Solar Energy Conference and Exhibition / Verlinden, Pierre et al. (ed.). - München : WIP, 2018. - pp. 527-530. - ISBN 978-3-936338-50-8 |
| URL of original publication: | https://www.eupvsec-planner.com/presentations/c45930/defect_analysis_of_apcvd_gettered_multicrystalline_silicon.htm, Last access on Feb 25, 2019 |
| Summary: |
The effects of atmospheric pressure chemical vapor deposition (APCVD) gettering on material quality of industry standard mc-Si wafers has been studied on a microscopic level and compared to POCl3 gettered samples. The interaction of the gettering efficacy with the microscopic defect structure has been studied by a combination of measurements of the effective minority charge carrier lifetime (eff), interstitial iron (Fei), optical microscope images of defect structures revealed with Secco etching, a subsequent high resolution etch pit density (EPD) analysis as well as Electron Beam Induced Current (EBIC) and Electron Backscatter Diffraction (EBSD). Findings include a similar gettering quality of APCVD- and POCl3-based glasses and a reduction of EPD after the gettering step.
|
| Subject (DDC): | 530 Physics |
| Keywords: | Defects, Gettering, Lifetime, APCVD, Multicrystalline Silicon |
| Link to License: | In Copyright |
| Bibliography of Konstanz: | Yes |
Cite This
Files in this item
![[PDF]](/themes/Kops/images/mimes/pdf.png "PDF file"){kind=small}
FLECK, Martin, Jeanette LINDROOS, Annika ZUSCHLAG, Giso HAHN, 2018. Defect analysis of APCVD gettered multicrystalline silicon. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, Sep 24, 2018 - Oct 28, 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München:WIP, pp. 527-530. ISBN 978-3-936338-50-8
@inproceedings{Fleck2018Defec-45202, title={Defect analysis of APCVD gettered multicrystalline silicon}, url={https://www.eupvsec-planner.com/presentations/c45930/defect_analysis_of_apcvd_gettered_multicrystalline_silicon.htm}, year={2018}, isbn={978-3-936338-50-8}, address={München}, publisher={WIP}, booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition}, pages={527--530}, editor={Verlinden, Pierre}, author={Fleck, Martin and Lindroos, Jeanette and Zuschlag, Annika and Hahn, Giso} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/45202"> <dc:creator>Fleck, Martin</dc:creator> <dc:creator>Hahn, Giso</dc:creator> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:title>Defect analysis of APCVD gettered multicrystalline silicon</dcterms:title> <dc:contributor>Fleck, Martin</dc:contributor> <dcterms:abstract xml:lang="eng">The effects of atmospheric pressure chemical vapor deposition (APCVD) gettering on material quality of industry standard mc-Si wafers has been studied on a microscopic level and compared to POCl3 gettered samples. The interaction of the gettering efficacy with the microscopic defect structure has been studied by a combination of measurements of the effective minority charge carrier lifetime (eff), interstitial iron (Fei), optical microscope images of defect structures revealed with Secco etching, a subsequent high resolution etch pit density (EPD) analysis as well as Electron Beam Induced Current (EBIC) and Electron Backscatter Diffraction (EBSD). Findings include a similar gettering quality of APCVD- and POCl3-based glasses and a reduction of EPD after the gettering step.</dcterms:abstract> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/45202/3/Fleck_2-12w8p592q4kmg3.pdf"/> <dc:creator>Lindroos, Jeanette</dc:creator> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:issued>2018</dcterms:issued> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-02-25T13:00:49Z</dcterms:available> <dc:contributor>Zuschlag, Annika</dc:contributor> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/45202/3/Fleck_2-12w8p592q4kmg3.pdf"/> <dc:contributor>Lindroos, Jeanette</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-02-25T13:00:49Z</dc:date> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/45202"/> <dc:rights>terms-of-use</dc:rights> <dc:language>eng</dc:language> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:creator>Zuschlag, Annika</dc:creator> </rdf:Description> </rdf:RDF>
Downloads since Feb 25, 2019 (Information about access statistics)
| Fleck_2-12w8p592q4kmg3.pdf | 43 |
This item appears in the following Collection(s)
Search KOPS
Browse
My Account
