Influence of emitter layers on LeTID kinetics in multicrystalline silicon
| Type of Publication: | Contribution to a conference collection |
| Publication status: | Published |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-2-1kvnxsdve8t262 |
| Author: | Otaegi, Alona; Skorka, Daniel; Schmid, Andreas; Zuschlag, Annika; Jimeno, Juan Carlos; Hahn, Giso |
| Year of publication: | 2018 |
| Conference: | 35th European Photovoltaic Solar Energy Conference and Exhibition, Sep 24, 2018 - Sep 28, 2018, Brussels |
| Published in: | 35th European Photovoltaic Solar Energy Conference and Exhibition / Verlinden, Pierre et al. (ed.). - München : WIP, 2018. - pp. 293-297. - ISBN 978-3-936338-50-8 |
| URL of original publication: | https://www.eupvsec-planner.com/presentations/c45789/influence_of_emitter_layers_on_letid_kinetics_in_multicrystalline_silicon.htm, Last access on Feb 16, 2019 |
| Summary: |
The influence of emitter layers on LeTID kinetics in multicrystalline silicon is analysed in this work. Multicrystalline silicon samples with emitter layers with sheet resistivity of 60, 175, 200, 230 and 360 Ω/sq have been processed and exposed afterwards to 1 sun illumination at 75ºC for more than 2000 h. The effective lifetime of the minority charge carriers of the samples has been measured repetitively by spatially resolved photoluminescence. The resulting lifetime maps are analysed and the effective defect concentration of the samples is calculated. This approach leads to different degradation rates, depending on the emitter sheet resistivity, and to the same defect regeneration rate, but differing in the onset of regeneration.
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| Subject (DDC): | 530 Physics |
| Keywords: | Degradation, Regeneration, Emitter, Layers, Multicrystalline Silicon, LeTID |
| Link to License: | In Copyright |
| Bibliography of Konstanz: | Yes |
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OTAEGI, Alona, Daniel SKORKA, Andreas SCHMID, Annika ZUSCHLAG, Juan Carlos JIMENO, Giso HAHN, 2018. Influence of emitter layers on LeTID kinetics in multicrystalline silicon. 35th European Photovoltaic Solar Energy Conference and Exhibition. Brussels, Sep 24, 2018 - Sep 28, 2018. In: VERLINDEN, Pierre, ed. and others. 35th European Photovoltaic Solar Energy Conference and Exhibition. München:WIP, pp. 293-297. ISBN 978-3-936338-50-8
@inproceedings{Otaegi2018Influ-45200, title={Influence of emitter layers on LeTID kinetics in multicrystalline silicon}, url={https://www.eupvsec-planner.com/presentations/c45789/influence_of_emitter_layers_on_letid_kinetics_in_multicrystalline_silicon.htm}, year={2018}, isbn={978-3-936338-50-8}, address={München}, publisher={WIP}, booktitle={35th European Photovoltaic Solar Energy Conference and Exhibition}, pages={293--297}, editor={Verlinden, Pierre}, author={Otaegi, Alona and Skorka, Daniel and Schmid, Andreas and Zuschlag, Annika and Jimeno, Juan Carlos and Hahn, Giso} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/45200"> <dc:contributor>Zuschlag, Annika</dc:contributor> <dc:creator>Otaegi, Alona</dc:creator> <dc:language>eng</dc:language> <dc:rights>terms-of-use</dc:rights> <dc:creator>Schmid, Andreas</dc:creator> <dc:contributor>Hahn, Giso</dc:contributor> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/45200/3/Otaegi_2-1kvnxsdve8t262.pdf"/> <dcterms:issued>2018</dcterms:issued> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Jimeno, Juan Carlos</dc:contributor> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dc:contributor>Skorka, Daniel</dc:contributor> <dc:creator>Zuschlag, Annika</dc:creator> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-02-25T12:40:32Z</dcterms:available> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/45200/3/Otaegi_2-1kvnxsdve8t262.pdf"/> <dc:creator>Hahn, Giso</dc:creator> <dc:creator>Jimeno, Juan Carlos</dc:creator> <dc:contributor>Otaegi, Alona</dc:contributor> <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/45200"/> <dcterms:abstract xml:lang="eng">The influence of emitter layers on LeTID kinetics in multicrystalline silicon is analysed in this work. Multicrystalline silicon samples with emitter layers with sheet resistivity of 60, 175, 200, 230 and 360 Ω/sq have been processed and exposed afterwards to 1 sun illumination at 75ºC for more than 2000 h. The effective lifetime of the minority charge carriers of the samples has been measured repetitively by spatially resolved photoluminescence. The resulting lifetime maps are analysed and the effective defect concentration of the samples is calculated. This approach leads to different degradation rates, depending on the emitter sheet resistivity, and to the same defect regeneration rate, but differing in the onset of regeneration.</dcterms:abstract> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <dc:creator>Skorka, Daniel</dc:creator> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-02-25T12:40:32Z</dc:date> <dc:contributor>Schmid, Andreas</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:title>Influence of emitter layers on LeTID kinetics in multicrystalline silicon</dcterms:title> </rdf:Description> </rdf:RDF>
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