@article{Brooks2018Theor-42667,
  year={2018},
  doi={10.1103/PhysRevB.97.195454},
  title={Theory of strain-induced confinement in transition metal dichalcogenide monolayers},
  number={19},
  volume={97},
  issn={2469-9950},
  journal={Physical Review B},
  author={Brooks, Matthew and Burkard, Guido},
  note={Article Number: 195454}
}

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    <dc:contributor>Burkard, Guido</dc:contributor>
    <dc:creator>Burkard, Guido</dc:creator>
    <dc:language>eng</dc:language>
    <dcterms:title>Theory of strain-induced confinement in transition metal dichalcogenide monolayers</dcterms:title>
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    <dcterms:abstract xml:lang="eng">Recent experimental studies of out-of-plane straining geometries of transition metal dichalchogenide (TMD) monolayers have demonstrated sufficient band-gap renormalization for device application, such as single-photon emitters. Here, a simple continuum-mechanical plate-theory approach is used to estimate the topography of TMD monolayers layered atop nanopillar arrays. From such geometries, the induced conduction-band potential and band-gap renormalization are given, demonstrating a curvature of the potential that is independent of the height of the deforming nanopillar. Additionally, with a semiclassical WKB approximation, the expected escape rate of electrons in the strain potential may be calculated as a function of the height of the deforming nanopillar. This approach is in accordance with experiment, supporting recent findings suggesting that increasing nanopillar height decreases the linewidth of the single-photon emitters observed at the tip of the pillar and predicting the shift in photon energy with nanopillar height for systems with consistent topography.</dcterms:abstract>
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    <dc:creator>Brooks, Matthew</dc:creator>
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