Journal article: Theory of strain-induced confinement in transition metal dichalcogenide monolayers
Theory of strain-induced confinement in transition metal dichalcogenide monolayers
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2018
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Recent experimental studies of out-of-plane straining geometries of transition metal dichalchogenide (TMD) monolayers have demonstrated sufficient band-gap renormalization for device application, such as single-photon emitters. Here, a simple continuum-mechanical plate-theory approach is used to estimate the topography of TMD monolayers layered atop nanopillar arrays. From such geometries, the induced conduction-band potential and band-gap renormalization are given, demonstrating a curvature of the potential that is independent of the height of the deforming nanopillar. Additionally, with a semiclassical WKB approximation, the expected escape rate of electrons in the strain potential may be calculated as a function of the height of the deforming nanopillar. This approach is in accordance with experiment, supporting recent findings suggesting that increasing nanopillar height decreases the linewidth of the single-photon emitters observed at the tip of the pillar and predicting the shift in photon energy with nanopillar height for systems with consistent topography.
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530 Physics
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Physical Review B ; 97 (2018), 19. - 195454. - ISSN 2469-9950. - eISSN 2469-9969
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BROOKS, Matthew, Guido BURKARD, 2018. Theory of strain-induced confinement in transition metal dichalcogenide monolayers. In: Physical Review B. 97(19), 195454. ISSN 2469-9950. eISSN 2469-9969. Available under: doi: 10.1103/PhysRevB.97.195454BibTex
@article{Brooks2018Theor-42667,
year={2018},
doi={10.1103/PhysRevB.97.195454},
title={Theory of strain-induced confinement in transition metal dichalcogenide monolayers},
number={19},
volume={97},
issn={2469-9950},
journal={Physical Review B},
author={Brooks, Matthew and Burkard, Guido},
note={Article Number: 195454}
}
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<dcterms:abstract xml:lang="eng">Recent experimental studies of out-of-plane straining geometries of transition metal dichalchogenide (TMD) monolayers have demonstrated sufficient band-gap renormalization for device application, such as single-photon emitters. Here, a simple continuum-mechanical plate-theory approach is used to estimate the topography of TMD monolayers layered atop nanopillar arrays. From such geometries, the induced conduction-band potential and band-gap renormalization are given, demonstrating a curvature of the potential that is independent of the height of the deforming nanopillar. Additionally, with a semiclassical WKB approximation, the expected escape rate of electrons in the strain potential may be calculated as a function of the height of the deforming nanopillar. This approach is in accordance with experiment, supporting recent findings suggesting that increasing nanopillar height decreases the linewidth of the single-photon emitters observed at the tip of the pillar and predicting the shift in photon energy with nanopillar height for systems with consistent topography.</dcterms:abstract>
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