KOPS - Das Institutionelle Repositorium der Universität Konstanz

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells

Zitieren

Dateien zu dieser Ressource

Prüfsumme: MD5:e29d7ed6422c79f67eb41cdf7a1001ae

KLEEKAJAI, Suppawan, Fan JIANG, Michael STAVOLA, Vijay YELUNDUR, Kenta NAKAYASHIKI, Ajeet ROHATGI, Giso HAHN, Sven SEREN, Juris KALEJS, 2006. Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells. In: Journal of Applied Physics. 100(9), 093517. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2363684

@article{Kleekajai2006Conce-42192, title={Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells}, year={2006}, doi={10.1063/1.2363684}, number={9}, volume={100}, issn={0021-8979}, journal={Journal of Applied Physics}, author={Kleekajai, Suppawan and Jiang, Fan and Stavola, Michael and Yelundur, Vijay and Nakayashiki, Kenta and Rohatgi, Ajeet and Hahn, Giso and Seren, Sven and Kalejs, Juris}, note={Article Number: 093517} }

Hahn, Giso Stavola, Michael Jiang, Fan Seren, Sven Kleekajai, Suppawan Hahn, Giso 2006 Stavola, Michael Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells Nakayashiki, Kenta 2018-04-27T13:20:03Z Rohatgi, Ajeet Yelundur, Vijay 2018-04-27T13:20:03Z The hydrogenation of crystalline Si by methods used to passivate defects in Si solar cells has been studied by infrared spectroscopy. For these experiments, floating-zone Si that contained Pt impurities that act as traps for H was used as a model system in which H could be directly detected. In this model system, the concentration and indiffusion depth of H were determined for different hydrogenation treatments so that their effectiveness could be compared. The postdeposition annealing of a hydrogen-rich SiN<sub>x</sub> surface layer was found to introduce H into the Si bulk with a concentration of ∼10<sup>15</sup>cm<sup>−3</sup> under the best conditions investigated here. Rohatgi, Ajeet Kalejs, Juris terms-of-use Kleekajai, Suppawan Yelundur, Vijay Nakayashiki, Kenta Jiang, Fan Kalejs, Juris eng Seren, Sven

Dateiabrufe seit 27.04.2018 (Informationen über die Zugriffsstatistik)

Kleekajai_2-1y0qanafcse506.pdf 94

Das Dokument erscheint in:

KOPS Suche


Stöbern

Mein Benutzerkonto