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Influence of rear side coating on emitter formation during POCL<sub>3</sub> diffusion process

Influence of rear side coating on emitter formation during POCL3 diffusion process

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STEYER, Michael, Amir DASTGHEIB-SHIRAZI, Josh ENGELHARDT, Giso HAHN, Barbara TERHEIDEN, 2016. Influence of rear side coating on emitter formation during POCL3 diffusion process. 32nd European Photovoltaic Solar Energy Conference and Exhibition. Munich, 20. Jun 2016 - 24. Jun 2016. In: Proceedings of 32nd EU PVSEC. 32nd European Photovoltaic Solar Energy Conference and Exhibition. Munich, 20. Jun 2016 - 24. Jun 2016. München:WIP, pp. 595-597. eISSN 2196-100X. ISBN 3-936338-41-8. Available under: doi: 10.4229/EUPVSEC20162016-2AV.1.7

@inproceedings{Steyer2016Influ-36373, title={Influence of rear side coating on emitter formation during POCL3 diffusion process}, year={2016}, doi={10.4229/EUPVSEC20162016-2AV.1.7}, isbn={3-936338-41-8}, address={München}, publisher={WIP}, booktitle={Proceedings of 32nd EU PVSEC}, pages={595--597}, author={Steyer, Michael and Dastgheib-Shirazi, Amir and Engelhardt, Josh and Hahn, Giso and Terheiden, Barbara} }

Steyer, Michael Dastgheib-Shirazi, Amir Engelhardt, Josh Influence of rear side coating on emitter formation during POCL<sub>3</sub> diffusion process Terheiden, Barbara Steyer, Michael 2016 Hahn, Giso The influence of a SiN<sub>x</sub> coating of a Si wafer on sheet resistance (R<sub>Sh</sub>) of a neighbouring wafer during POCl<sub>3</sub> diffusion process is investigated. Wafers facing the SiN<sub>x</sub> layer of the neighboring wafer in the next slot of the quartz boat show a lower R<sub>Sh</sub> compared to those facing a bare Si wafer, e.g. a reduction from 61 Ω/sq to 52 Ω/sq and a thicker PSG layer are determined. The active doping profile, measured by ECV, shows a deeper plateau region while the tail region is unchanged. Accordingly, the emitter saturation current density rises from 130 fA cm<sup>-2</sup> to 193 fA cm<sup>-2</sup>. We propose that the thicker PSG layer originates from a lower consumption of the reactive gases (POCl<sub>3</sub>-N<sub>2</sub> and O<sub>2</sub>) at the SiN<sub>x</sub> coated surface and thus a higher availability of them at the bare Si surface. On the other hand, we also investigate the influence of the thickness of the SiN<sub>x</sub> rear coating on the emitter at the non-coated Si surface. Already a very thin layer of 20 nm SiNx causes a significant change in R<sub>Sh</sub> and the emitter profile, while there was no difference observed for the SiN<sub>x</sub> thickness in the range from 20 nm to 160 nm. Facing a rear coated neighbor wafer during diffusion seems to improve the uniformity of R<sub>Sh</sub> on 6-inch large area wafers. eng Hahn, Giso Engelhardt, Josh 2016-12-16T14:17:59Z Dastgheib-Shirazi, Amir Terheiden, Barbara 2016-12-16T14:17:59Z

Dateiabrufe seit 16.12.2016 (Informationen über die Zugriffsstatistik)

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