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Bias-plasma Assisted RF Magnetron Sputter Deposition of Hydrogen-less Amorphous Silicon

Bias-plasma Assisted RF Magnetron Sputter Deposition of Hydrogen-less Amorphous Silicon

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GERKE, Sebastian, Giso HAHN, Reinhart JOB, Barbara TERHEIDEN, 2015. Bias-plasma Assisted RF Magnetron Sputter Deposition of Hydrogen-less Amorphous Silicon. In: Energy Procedia. 84, pp. 105-109. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2015.12.302

@article{Gerke2015-12Biasp-33781, title={Bias-plasma Assisted RF Magnetron Sputter Deposition of Hydrogen-less Amorphous Silicon}, year={2015}, doi={10.1016/j.egypro.2015.12.302}, volume={84}, journal={Energy Procedia}, pages={105--109}, author={Gerke, Sebastian and Hahn, Giso and Job, Reinhart and Terheiden, Barbara} }

Hahn, Giso Job, Reinhart 2016-05-02T14:29:56Z Hahn, Giso Gerke, Sebastian eng 2015-12 2016-05-02T14:29:56Z Job, Reinhart Terheiden, Barbara Gerke, Sebastian The execution of special hydrogen diffusion experiments requires an initially hydrogen-free drain layer. Hydrogen-free amorphous silicon (a-Si) deposited by radio frequency magnetron sputter deposition (RFSD) serves this purpose. RFSD yields a rough surface of the film but this can be flattened by an additional post-hydrogenation step. Weak Si-Si bonds are reorganized by hydrogen and the surface becomes smoother. However, by post-hydrogenation the a-Si layer loses its hydrogen-free characteristic. Bias-plasma assisted RFSD offers the possibility of a direct deposition of hydrogen-free a-Si films that exhibit a smooth surface. In this way an amorphous network with only few vacancies and related defects can be achieved as a consequence of the reorganization of weak Si-Si bonds during bias-plasma assisted deposition. Using a crystalline silicon wafer as base substrate for deposition the bias-plasma can additionally be used to prepare the c-Si surface whereby the HF-dip for removing native oxide can be omitted. The optimal deposition temperature of RFSD without bias-plasma, with respect to surface passivation, is ∼325 °C. Bias-plasma assisted RFSD leads to an additional interaction of atoms on the surface of the growing a-Si layer with atoms in the bias-plasma. This interaction decreases the optimal deposition temperature to ∼275 °C. Furthermore, the bias-plasma related flattening of the a-Si surface yields higher passivation quality of post-hydrogenated thin layers (≤ 40 nm) while the formation of additional ion induced defects decreases the passivation quality of thick (>> 40 nm) a-Si layers. Bias-plasma Assisted RF Magnetron Sputter Deposition of Hydrogen-less Amorphous Silicon Terheiden, Barbara

Dateiabrufe seit 02.05.2016 (Informationen über die Zugriffsstatistik)

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