Aufgrund von Vorbereitungen auf eine neue Version von KOPS, können kommenden Montag und Dienstag keine Publikationen eingereicht werden. (Due to preparations for a new version of KOPS, no publications can be submitted next Monday and Tuesday.)
Type of Publication: | Journal article |
Publication status: | Published |
URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-0-327966 |
Author: | Gerke, Sebastian; Hahn, Giso; Job, Reinhart; Terheiden, Barbara |
Year of publication: | 2015 |
Published in: | Energy Procedia ; 84 (2015). - pp. 105-109. - eISSN 1876-6102 |
DOI (citable link): | https://dx.doi.org/10.1016/j.egypro.2015.12.302 |
Summary: |
The execution of special hydrogen diffusion experiments requires an initially hydrogen-free drain layer. Hydrogen-free amorphous silicon (a-Si) deposited by radio frequency magnetron sputter deposition (RFSD) serves this purpose. RFSD yields a rough surface of the film but this can be flattened by an additional post-hydrogenation step. Weak Si-Si bonds are reorganized by hydrogen and the surface becomes smoother. However, by post-hydrogenation the a-Si layer loses its hydrogen-free characteristic. Bias-plasma assisted RFSD offers the possibility of a direct deposition of hydrogen-free a-Si films that exhibit a smooth surface. In this way an amorphous network with only few vacancies and related defects can be achieved as a consequence of the reorganization of weak Si-Si bonds during bias-plasma assisted deposition. Using a crystalline silicon wafer as base substrate for deposition the bias-plasma can additionally be used to prepare the c-Si surface whereby the HF-dip for removing native oxide can be omitted. The optimal deposition temperature of RFSD without bias-plasma, with respect to surface passivation, is ∼325 °C. Bias-plasma assisted RFSD leads to an additional interaction of atoms on the surface of the growing a-Si layer with atoms in the bias-plasma. This interaction decreases the optimal deposition temperature to ∼275 °C. Furthermore, the bias-plasma related flattening of the a-Si surface yields higher passivation quality of post-hydrogenated thin layers (≤ 40 nm) while the formation of additional ion induced defects decreases the passivation quality of thick (>> 40 nm) a-Si layers.
|
Subject (DDC): | 530 Physics |
Link to License: | Attribution-NonCommercial-NoDerivatives 4.0 International |
Bibliography of Konstanz: | Yes |
GERKE, Sebastian, Giso HAHN, Reinhart JOB, Barbara TERHEIDEN, 2015. Bias-plasma Assisted RF Magnetron Sputter Deposition of Hydrogen-less Amorphous Silicon. In: Energy Procedia. 84, pp. 105-109. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2015.12.302
@article{Gerke2015-12Biasp-33781, title={Bias-plasma Assisted RF Magnetron Sputter Deposition of Hydrogen-less Amorphous Silicon}, year={2015}, doi={10.1016/j.egypro.2015.12.302}, volume={84}, journal={Energy Procedia}, pages={105--109}, author={Gerke, Sebastian and Hahn, Giso and Job, Reinhart and Terheiden, Barbara} }
Gerke_0-327966.pdf | 419 |