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Extremely high currents in RGS (Ribbon Growth on Substrate) silicon solar cells by 3D carrier collecting channels

Extremely high currents in RGS (Ribbon Growth on Substrate) silicon solar cells by 3D carrier collecting channels

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HAHN, Giso, C. HÄSSLER, M. LANGENKAMP, 2000. Extremely high currents in RGS (Ribbon Growth on Substrate) silicon solar cells by 3D carrier collecting channels. 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes. Copper Mountain, Colorado, 14. Aug 2000 - 16. Aug 2000. In: 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes : Extended Abstracts and Papers. Golden, Colorado:National Renewable Energy Laboratory, pp. 208-211

@inproceedings{Hahn2000Extre-33077, title={Extremely high currents in RGS (Ribbon Growth on Substrate) silicon solar cells by 3D carrier collecting channels}, url={https://www.nrel.gov/docs/fy00osti/28844.pdf}, year={2000}, address={Golden, Colorado}, publisher={National Renewable Energy Laboratory}, booktitle={10th Workshop on Crystalline Silicon Solar Cell Materials and Processes : Extended Abstracts and Papers}, pages={208--211}, author={Hahn, Giso and Häßler, C. and Langenkamp, M.} }

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