Analytical models for the series resistance of selective emitters in silicon solar cells including the effect of busbars

Abstract

A theoretical analysis of the power loss and series resistance of the front side emitter in silicon solar cells is presented. Existing 1D models (infinitely long finger) and 2D models (including the effect of busbars) of emitter series resistance contribution are extended to the case of selective emitters. The general case of different current densities for both emitters in the selective emitter scheme is considered in these extensions. The resulting models depend on the individual sheet resistances and current densities in both emitters and the device's overall grid geometry. The models are corroborated by finite element simulation of the potential in the emitter. An excellent agreement is found between the analytical models, and the simulations for a wide range of sheet resistances typically encountered in silicon solar cells. Grid simulations using the 2D model are applied to solar cells with selective emitters, where the width of the low-resistive emitter was varied. The simulations demonstrate that the 2D model can explain the absolute change in fill factor observed in these cells.