On the characteristics of the doping profile under local metal contacts

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dc.contributor.authorMicard, Gabriel
dc.contributor.authorHahn, Giso
dc.contributor.authorTerheiden, Barbara
dc.date.accessioned2018-10-25T12:53:41Z
dc.date.available2018-10-25T12:53:41Z
dc.date.issued2018eng
dc.description.abstractIn many solar cell concepts, the recombination at local contacts is a bottleneck for the efficiency. Therefore, an optimized doping profile underneath the metal contact would improve the cell performance. We investigate the saturation current density (J0e,met) value of various doping profiles by TCAD simulation and showed that lowest J0e,met values are obtained for profiles with a surface concentration Ns > 5·1020 cm−3 as a consequence of the Pauli blocking and almost independently of the junction depth xj. For profiles with lower Ns we could show an approximate proportionality between J0e,met and the sheet resistance (Rsheet) making the recombination performance of these profiles quasi-independent of the profile shape. Therefore, profiles with even lower value of Rsheet as presently used, typically <10 Ω/sqr while keeping an Ns > 1020 cm−3 could allow to reach even lower J0e,met, typically <100 fA/cm2. In general Auger recombination is very low (< 10 fA/cm2 for Rsheet > 5 Ω/sqr) and does not play a role in the optimal profile shape of the emitter.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1063/1.5049258eng
dc.identifier.ppn512312583
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/43618
dc.language.isoengeng
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc530eng
dc.titleOn the characteristics of the doping profile under local metal contactseng
dc.typeINPROCEEDINGSeng
dspace.entity.typePublication
kops.citation.bibtex
@inproceedings{Micard2018chara-43618,
  year={2018},
  doi={10.1063/1.5049258},
  title={On the characteristics of the doping profile under local metal contacts},
  number={1999,1},
  isbn={978-0-7354-1715-1},
  issn={0094-243X},
  publisher={AIP Publishing},
  address={Melville, NY},
  series={AIP Conference Proceedings},
  booktitle={SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics},
  editor={Ballif, Christophe},
  author={Micard, Gabriel and Hahn, Giso and Terheiden, Barbara},
  note={Article Number: 020019}
}
kops.citation.iso690MICARD, Gabriel, Giso HAHN, Barbara TERHEIDEN, 2018. On the characteristics of the doping profile under local metal contacts. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, 19. März 2018 - 21. März 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020019. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049258deu
kops.citation.iso690MICARD, Gabriel, Giso HAHN, Barbara TERHEIDEN, 2018. On the characteristics of the doping profile under local metal contacts. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Lausanne, Mar 19, 2018 - Mar 21, 2018. In: BALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020019. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049258eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/43618">
    <dc:contributor>Terheiden, Barbara</dc:contributor>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/43618/3/Micard_2-cp9ez1cza53j2.pdf"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/43618/3/Micard_2-cp9ez1cza53j2.pdf"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:creator>Micard, Gabriel</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-10-25T12:53:41Z</dc:date>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Terheiden, Barbara</dc:creator>
    <dc:contributor>Micard, Gabriel</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-10-25T12:53:41Z</dcterms:available>
    <dc:creator>Hahn, Giso</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/43618"/>
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:issued>2018</dcterms:issued>
    <dc:rights>terms-of-use</dc:rights>
    <dcterms:abstract xml:lang="eng">In many solar cell concepts, the recombination at local contacts is a bottleneck for the efficiency. Therefore, an optimized doping profile underneath the metal contact would improve the cell performance. We investigate the saturation current density (J&lt;sub&gt;0e,met&lt;/sub&gt;) value of various doping profiles by TCAD simulation and showed that lowest J&lt;sub&gt;0e,met&lt;/sub&gt; values are obtained for profiles with a surface concentration N&lt;sub&gt;s&lt;/sub&gt; &gt; 5·10&lt;sup&gt;20&lt;/sup&gt; cm&lt;sup&gt;−3&lt;/sup&gt; as a consequence of the Pauli blocking and almost independently of the junction depth x&lt;sub&gt;j&lt;/sub&gt;. For profiles with lower N&lt;sub&gt;s&lt;/sub&gt; we could show an approximate proportionality between J&lt;sub&gt;0e,met&lt;/sub&gt; and the sheet resistance (R&lt;sub&gt;sheet&lt;/sub&gt;) making the recombination performance of these profiles quasi-independent of the profile shape. Therefore, profiles with even lower value of R&lt;sub&gt;sheet&lt;/sub&gt; as presently used, typically &lt;10 Ω/sqr while keeping an N&lt;sub&gt;s&lt;/sub&gt; &gt; 10&lt;sup&gt;20&lt;/sup&gt; cm&lt;sup&gt;−3&lt;/sup&gt; could allow to reach even lower J&lt;sub&gt;0e,met&lt;/sub&gt;, typically &lt;100 fA/cm&lt;sup&gt;2&lt;/sup&gt;. In general Auger recombination is very low (&lt; 10 fA/cm&lt;sup&gt;2&lt;/sup&gt; for R&lt;sub&gt;sheet&lt;/sub&gt; &gt; 5 Ω/sqr) and does not play a role in the optimal profile shape of the emitter.</dcterms:abstract>
    <dcterms:title>On the characteristics of the doping profile under local metal contacts</dcterms:title>
    <dc:contributor>Hahn, Giso</dc:contributor>
  </rdf:Description>
</rdf:RDF>
kops.conferencefieldSiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics, 19. März 2018 - 21. März 2018, Lausannedeu
kops.date.conferenceEnd2018-03-21eng
kops.date.conferenceStart2018-03-19eng
kops.description.openAccessopenaccessgreen
kops.flag.isPeerReviewedtrueeng
kops.flag.knbibliographytrue
kops.identifier.nbnurn:nbn:de:bsz:352-2-cp9ez1cza53j2
kops.location.conferenceLausanneeng
kops.sourcefieldBALLIF, Christophe, ed. and others. <i>SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics</i>. Melville, NY: AIP Publishing, 2018, 020019. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049258deu
kops.sourcefield.plainBALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020019. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049258deu
kops.sourcefield.plainBALLIF, Christophe, ed. and others. SiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaics. Melville, NY: AIP Publishing, 2018, 020019. AIP Conference Proceedings. 1999,1. ISSN 0094-243X. eISSN 1551-7616. ISBN 978-0-7354-1715-1. Available under: doi: 10.1063/1.5049258eng
kops.title.conferenceSiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaicseng
relation.isAuthorOfPublication91cfb726-0480-4d0d-acab-c6286a05507d
relation.isAuthorOfPublicatione82405a2-e86b-44d7-8126-8cfdd7e627c9
relation.isAuthorOfPublicationde8e4fa2-8a60-4daa-b066-b2e589d61e09
relation.isAuthorOfPublication.latestForDiscovery91cfb726-0480-4d0d-acab-c6286a05507d
source.bibliographicInfo.articleNumber020019eng
source.bibliographicInfo.seriesNumber1999,1eng
source.contributor.editorBallif, Christophe
source.flag.etalEditortrueeng
source.identifier.eissn1551-7616eng
source.identifier.isbn978-0-7354-1715-1eng
source.identifier.issn0094-243Xeng
source.publisherAIP Publishingeng
source.publisher.locationMelville, NYeng
source.relation.ispartofseriesAIP Conference Proceedingseng
source.titleSiliconPV, the 8th International Conference on Crystalline Silicon Photovoltaicseng

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