New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters

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The precise knowledge of the amount and the location in depth of inactive phosphorus in an n-type emitter is still a challenge. As a new approach, we determine the total amount of phosphorus (P dose) in the emitter stepwise in dependence of etching depth with the characterization tool ICP-OES. A comparison of the data with the electrically active P concentration profile measured by ECV allows to determine in which depths electrically inactive phosphorus is present. For a highly doped emitter, we show that most of the inactive P dose is located next to the sample surface. Furthermore, we compare the determined P dose in dependence of depth with the P dose extracted from a SIMS profile. In a second experiment, we investigate the amount of inactive phosphorus in the whole emitter for various n-type emitters, depending on the POCl3-N2 gas flow as a significant diffusion parameter. It is shown that an increase of the POCl3-N2 gas flow results in a saturation effect of the active phosphorus, while the amount of inactive phosphorus is strongly increasing.

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ISO 690STEYER, Michael, Amir DASTGHEIB-SHIRAZI, Giso HAHN, Barbara TERHEIDEN, 2015. New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters. In: Energy Procedia. 2015, 77, pp. 316-320. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2015.07.045
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@article{Steyer2015Metho-32020,
  year={2015},
  doi={10.1016/j.egypro.2015.07.045},
  title={New Method for Determination of Electrically Inactive Phosphorus in n-type Emitters},
  volume={77},
  journal={Energy Procedia},
  pages={316--320},
  author={Steyer, Michael and Dastgheib-Shirazi, Amir and Hahn, Giso and Terheiden, Barbara}
}
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