Band gap dependence with temperature of semiconductors from solar cells electrical parameters

Bensalem, Sabrina; Chegaar, Mohamed; Herguth, Axel

Band gap dependence with temperature of semiconductors from solar cells electrical parameters

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Date

2017

Authors

Bensalem, Sabrina

Chegaar, Mohamed

Herguth, Axel

DOI (citable link)

10.1016/j.cap.2016.10.012

Collections

Physik

Publication type

Journal article

Publication status

Published

Published in

Current Applied Physics ; 17 (2017), 1. - pp. 55-59. - ISSN 1567-1739. - eISSN 1878-1675

Abstract

Using experimental measurements of the open-circuit voltage and the short-circuit current density at different temperatures, for a solar cell, we investigate numerically the band gap evolution with temperature for the semiconductor constituting the concerned device. The application of the approach in the case of silicon semiconductor gives satisfying results compared to previous works.

Subject (DDC)

530 Physics

Keywords

Band gap; Semiconductors; Temperature; Solar cells; Open-circuit voltage; Short-circuit current density

Cite This

ISO 690

BENSALEM, Sabrina, Mohamed CHEGAAR, Axel HERGUTH, 2017. Band gap dependence with temperature of semiconductors from solar cells electrical parameters. In: Current Applied Physics. 17(1), pp. 55-59. ISSN 1567-1739. eISSN 1878-1675. Available under: doi: 10.1016/j.cap.2016.10.012

BibTex

@article{Bensalem2017-01depen-37590,
  year={2017},
  doi={10.1016/j.cap.2016.10.012},
  title={Band gap dependence with temperature of semiconductors from solar cells electrical parameters},
  number={1},
  volume={17},
  issn={1567-1739},
  journal={Current Applied Physics},
  pages={55--59},
  author={Bensalem, Sabrina and Chegaar, Mohamed and Herguth, Axel}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/37590">
    <dc:creator>Chegaar, Mohamed</dc:creator>
    <dc:creator>Bensalem, Sabrina</dc:creator>
    <dc:contributor>Bensalem, Sabrina</dc:contributor>
    <dcterms:title>Band gap dependence with temperature of semiconductors from solar cells electrical parameters</dcterms:title>
    <dcterms:issued>2017-01</dcterms:issued>
    <dc:language>eng</dc:language>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-02-20T10:48:02Z</dc:date>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2017-02-20T10:48:02Z</dcterms:available>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/37590"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:abstract xml:lang="eng">Using experimental measurements of the open-circuit voltage and the short-circuit current density at different temperatures, for a solar cell, we investigate numerically the band gap evolution with temperature for the semiconductor constituting the concerned device. The application of the approach in the case of silicon semiconductor gives satisfying results compared to previous works.</dcterms:abstract>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Herguth, Axel</dc:creator>
    <dc:contributor>Chegaar, Mohamed</dc:contributor>
  </rdf:Description>
</rdf:RDF>

Bibliography of Konstanz

Yes