Publikation:

Band gap dependence with temperature of semiconductors from solar cells electrical parameters

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2017

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Bensalem, Sabrina
Chegaar, Mohamed

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https://doi.org/10.1016/j.cap.2016.10.012
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Current Applied Physics. 2017, 17(1), pp. 55-59. ISSN 1567-1739. eISSN 1878-1675. Available under: doi: 10.1016/j.cap.2016.10.012

Zusammenfassung

Using experimental measurements of the open-circuit voltage and the short-circuit current density at different temperatures, for a solar cell, we investigate numerically the band gap evolution with temperature for the semiconductor constituting the concerned device. The application of the approach in the case of silicon semiconductor gives satisfying results compared to previous works.

Zusammenfassung in einer weiteren Sprache

Fachgebiet (DDC)
530 Physik

Schlagwörter

Band gap; Semiconductors; Temperature; Solar cells; Open-circuit voltage; Short-circuit current density

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ISO 690BENSALEM, Sabrina, Mohamed CHEGAAR, Axel HERGUTH, 2017. Band gap dependence with temperature of semiconductors from solar cells electrical parameters. In: Current Applied Physics. 2017, 17(1), pp. 55-59. ISSN 1567-1739. eISSN 1878-1675. Available under: doi: 10.1016/j.cap.2016.10.012
BibTex
@article{Bensalem2017-01depen-37590,
  year={2017},
  doi={10.1016/j.cap.2016.10.012},
  title={Band gap dependence with temperature of semiconductors from solar cells electrical parameters},
  number={1},
  volume={17},
  issn={1567-1739},
  journal={Current Applied Physics},
  pages={55--59},
  author={Bensalem, Sabrina and Chegaar, Mohamed and Herguth, Axel}
}
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