@article{Nichterwitz2020Contr-52374,
  year={2020},
  doi={10.1021/acsaelm.0c00448},
  title={Control of Positive and Negative Magnetoresistance in Iron Oxide–Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices},
  number={8},
  volume={2},
  journal={ACS Applied Electronic Materials},
  pages={2543--2549},
  author={Nichterwitz, Martin and Honnali, Shashank and Zehner, Jonas and Schneider, Sebastian and Pohl, Darius and Schiemenz, Sandra and Gönnenwein, Sebastian T. B. and Nielsch, Kornelius and Leistner, Karin}
}

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    <dc:creator>Honnali, Shashank</dc:creator>
    <dc:contributor>Schiemenz, Sandra</dc:contributor>
    <dc:creator>Zehner, Jonas</dc:creator>
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    <dc:contributor>Honnali, Shashank</dc:contributor>
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    <dc:contributor>Nichterwitz, Martin</dc:contributor>
    <dcterms:title>Control of Positive and Negative Magnetoresistance in Iron Oxide–Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices</dcterms:title>
    <dc:creator>Pohl, Darius</dc:creator>
    <dc:contributor>Gönnenwein, Sebastian T. B.</dc:contributor>
    <dc:creator>Nichterwitz, Martin</dc:creator>
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    <dc:creator>Schneider, Sebastian</dc:creator>
    <dcterms:issued>2020</dcterms:issued>
    <dc:rights>terms-of-use</dc:rights>
    <dc:contributor>Schneider, Sebastian</dc:contributor>
    <dc:contributor>Pohl, Darius</dc:contributor>
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    <dcterms:abstract xml:lang="eng">The perspective of energy-efficient and tunable functional magnetic nanostructures has triggered research efforts in the fields of voltage control of magnetism and spintronics. We investigate the magnetotransport properties of nanocomposite iron oxide/iron thin films with a nominal iron thickness of 5–50 nm and find a positive magnetoresistance at small thicknesses. The highest magnetoresistance was found for 30 nm Fe with +1.1% at 3 T. This anomalous behavior is attributed to the presence of Fe&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt;–Fe nanocomposite regions due to grain boundary oxidation. At the Fe&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt;/Fe interfaces, spin-polarized electrons in the magnetite can be scattered and reoriented. A crossover to negative magnetoresistance (−0.11%) is achieved at a larger thickness (&gt;40 nm) when interface scattering effects become negligible as more current flows through the iron layer. Electrolytic gating of this system induces voltage-triggered redox reactions in the Fe&lt;sub&gt;3&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt; regions and thereby enables voltage-tuning of the magnetoresistance with the locally oxidized regions as the active tuning elements. In the low-magnetic-field region (&lt;1 T), a crossover from positive to negative magnetoresistance is achieved by a voltage change of only 1.72 V. At 3 T, a relative change of magnetoresistance about −45% during reduction was achieved for the 30 nm Fe sample. The present low-voltage approach signifies a step forward to practical and tunable room-temperature magnetoresistance-based nanodevices, which can boost the development of nanoscale and energy-efficient magnetic field sensors with high sensitivity, magnetic memories, and magnetoelectric devices in general.</dcterms:abstract>
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    <dc:creator>Gönnenwein, Sebastian T. B.</dc:creator>
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