Control of Positive and Negative Magnetoresistance in Iron Oxide–Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices

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2020
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Nichterwitz, Martin
Honnali, Shashank
Zehner, Jonas
Schneider, Sebastian
Pohl, Darius
Schiemenz, Sandra
Nielsch, Kornelius
Leistner, Karin
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ACS Applied Electronic Materials. ACS Publications. 2020, 2(8), pp. 2543-2549. eISSN 2637-6113. Available under: doi: 10.1021/acsaelm.0c00448
Zusammenfassung

The perspective of energy-efficient and tunable functional magnetic nanostructures has triggered research efforts in the fields of voltage control of magnetism and spintronics. We investigate the magnetotransport properties of nanocomposite iron oxide/iron thin films with a nominal iron thickness of 5–50 nm and find a positive magnetoresistance at small thicknesses. The highest magnetoresistance was found for 30 nm Fe with +1.1% at 3 T. This anomalous behavior is attributed to the presence of Fe3O4–Fe nanocomposite regions due to grain boundary oxidation. At the Fe3O4/Fe interfaces, spin-polarized electrons in the magnetite can be scattered and reoriented. A crossover to negative magnetoresistance (−0.11%) is achieved at a larger thickness (>40 nm) when interface scattering effects become negligible as more current flows through the iron layer. Electrolytic gating of this system induces voltage-triggered redox reactions in the Fe3O4 regions and thereby enables voltage-tuning of the magnetoresistance with the locally oxidized regions as the active tuning elements. In the low-magnetic-field region (<1 T), a crossover from positive to negative magnetoresistance is achieved by a voltage change of only 1.72 V. At 3 T, a relative change of magnetoresistance about −45% during reduction was achieved for the 30 nm Fe sample. The present low-voltage approach signifies a step forward to practical and tunable room-temperature magnetoresistance-based nanodevices, which can boost the development of nanoscale and energy-efficient magnetic field sensors with high sensitivity, magnetic memories, and magnetoelectric devices in general.

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530 Physik
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magnetoresistance, voltage control of magnetism, magneto-ionic control, magnetite, iron films
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ISO 690NICHTERWITZ, Martin, Shashank HONNALI, Jonas ZEHNER, Sebastian SCHNEIDER, Darius POHL, Sandra SCHIEMENZ, Sebastian T. B. GOENNENWEIN, Kornelius NIELSCH, Karin LEISTNER, 2020. Control of Positive and Negative Magnetoresistance in Iron Oxide–Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices. In: ACS Applied Electronic Materials. ACS Publications. 2020, 2(8), pp. 2543-2549. eISSN 2637-6113. Available under: doi: 10.1021/acsaelm.0c00448
BibTex
@article{Nichterwitz2020Contr-52374,
  year={2020},
  doi={10.1021/acsaelm.0c00448},
  title={Control of Positive and Negative Magnetoresistance in Iron Oxide–Iron Nanocomposite Thin Films for Tunable Magnetoelectric Nanodevices},
  number={8},
  volume={2},
  journal={ACS Applied Electronic Materials},
  pages={2543--2549},
  author={Nichterwitz, Martin and Honnali, Shashank and Zehner, Jonas and Schneider, Sebastian and Pohl, Darius and Schiemenz, Sandra and Goennenwein, Sebastian T. B. and Nielsch, Kornelius and Leistner, Karin}
}
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