Dynamics of the solidification of laser-annealed Si thin films

Kurzanzeige
dc.contributor.authorBoneberg, Johannes
dc.contributor.authorNedelcu, Johanndeu
dc.contributor.authorBender, Hubertdeu
dc.contributor.authorLeiderer, Paul
dc.date.accessioned2011-03-24T17:53:37Zdeu
dc.date.available2011-03-24T17:53:37Zdeu
dc.date.issued1993deu
dc.description.abstractNanosccond time-resolved reflectivity and transmission measurements are used for the observation of solidification phenomena, following incomplete or complete melting of thin Si films (d = 125 nm) by nanosecond laser pulses. Solidification is observed to proceed at the liquid-solid interface as long as the film is not melted completely. On complete melting of the film, nucleation in the liquid becomes important. Heat conduction into the quartz substrate rapidly cools the liquid, until after several tens of nanoseconds homogeneous nucleation of crystalline Si occurs at temperatures around 500 K below the melting point of Si. At even larger supercoolings our measurements indicate the transient formation of amorphous Si in addition to the formation of the crystalline phase.eng
dc.description.versionpublished
dc.format.mimetypeapplication/pdfdeu
dc.identifier.citationFirst publ. in: Materials Science and Engineering / A, 173 (1993), 1-2, pp. 347-350deu
dc.identifier.doi10.1016/0921-5093(93)90242-7
dc.identifier.ppn265739721deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/9101
dc.language.isoengdeu
dc.legacy.dateIssued2007deu
dc.rightsAttribution-NonCommercial-NoDerivs 2.0 Generic
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/2.0/
dc.subject.ddc530deu
dc.titleDynamics of the solidification of laser-annealed Si thin filmseng
dc.typeJOURNAL_ARTICLEdeu
dspace.entity.typePublication
kops.citation.bibtex
@article{Boneberg1993Dynam-9101,
  year={1993},
  doi={10.1016/0921-5093(93)90242-7},
  title={Dynamics of the solidification of laser-annealed Si thin films},
  number={1-2},
  volume={173},
  journal={Materials Science and Engineering / A},
  pages={347--350},
  author={Boneberg, Johannes and Nedelcu, Johann and Bender, Hubert and Leiderer, Paul}
}
kops.citation.iso690BONEBERG, Johannes, Johann NEDELCU, Hubert BENDER, Paul LEIDERER, 1993. Dynamics of the solidification of laser-annealed Si thin films. In: Materials Science and Engineering / A. 1993, 173(1-2), pp. 347-350. Available under: doi: 10.1016/0921-5093(93)90242-7deu
kops.citation.iso690BONEBERG, Johannes, Johann NEDELCU, Hubert BENDER, Paul LEIDERER, 1993. Dynamics of the solidification of laser-annealed Si thin films. In: Materials Science and Engineering / A. 1993, 173(1-2), pp. 347-350. Available under: doi: 10.1016/0921-5093(93)90242-7eng
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