In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence

Mchedlidze, Teimuraz; Alam, Md Mahabubul; Herguth, Axel; Weber, Joerg

In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence

Dateien

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Datum

2019

Autor:innen

Mchedlidze, Teimuraz

Alam, Md Mahabubul

Herguth, Axel

Weber, Joerg

DOI (zitierfähiger Link)

https://doi.org/10.1002/pssa.201800918

Sammlungen

Physik

Publikationstyp

Zeitschriftenartikel

Publikationsstatus

Published

Erschienen in

Physica Status Solidi (A) - Applications and Materials Science. 2019, 216(17), 1800918. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.201800918

Zusammenfassung

Carrier‐induced efficiency degradation of multi‐crystalline Si (mc‐Si) solar cells is studied in situ by detecting the electroluminescence (EL) from the cells. Series of spatially resolved EL images of the cells during constant forward current operation at low (24 °C) and at elevated (70 °C) temperatures are recorded. The degradation induced changes in the open circuit voltage correlate well with changes in the EL intensities. The similarity of light‐induced and carrier‐induced degradation processes for mc‐Si cells is confirmed. The correlation of the degradation with the material structure is analyzed. The degradation appears to correlate with the density of structural defects in the cells. The results verify that EL images present a powerful tool for in situ analyses of mc‐Si cell degradation processes in various cell structures with a broad variety of biasing and temperature conditions.

Fachgebiet (DDC)

530 Physik

Zitieren

ISO 690

MCHEDLIDZE, Teimuraz, Md Mahabubul ALAM, Axel HERGUTH, Joerg WEBER, 2019. In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence. In: Physica Status Solidi (A) - Applications and Materials Science. 2019, 216(17), 1800918. ISSN 1862-6300. eISSN 1862-6319. Available under: doi: 10.1002/pssa.201800918

BibTex

@article{Mchedlidze2019-09Obser-47186,
  year={2019},
  doi={10.1002/pssa.201800918},
  title={In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence},
  number={17},
  volume={216},
  issn={1862-6300},
  journal={Physica Status Solidi (A) - Applications and Materials Science},
  author={Mchedlidze, Teimuraz and Alam, Md Mahabubul and Herguth, Axel and Weber, Joerg},
  note={Article Number: 1800918}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/47186">
    <dc:creator>Weber, Joerg</dc:creator>
    <dc:creator>Herguth, Axel</dc:creator>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:contributor>Mchedlidze, Teimuraz</dc:contributor>
    <dcterms:title>In Situ Observation of the Degradation in Multi‐Crystalline Si Solar Cells by Electroluminescence</dcterms:title>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Mchedlidze, Teimuraz</dc:creator>
    <dcterms:issued>2019-09</dcterms:issued>
    <dc:contributor>Alam, Md Mahabubul</dc:contributor>
    <dc:creator>Alam, Md Mahabubul</dc:creator>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-10-10T12:58:45Z</dc:date>
    <dcterms:abstract xml:lang="eng">Carrier‐induced efficiency degradation of multi‐crystalline Si (mc‐Si) solar cells is studied in situ by detecting the electroluminescence (EL) from the cells. Series of spatially resolved EL images of the cells during constant forward current operation at low (24 °C) and at elevated (70 °C) temperatures are recorded. The degradation induced changes in the open circuit voltage correlate well with changes in the EL intensities. The similarity of light‐induced and carrier‐induced degradation processes for mc‐Si cells is confirmed. The correlation of the degradation with the material structure is analyzed. The degradation appears to correlate with the density of structural defects in the cells. The results verify that EL images present a powerful tool for in situ analyses of mc‐Si cell degradation processes in various cell structures with a broad variety of biasing and temperature conditions.</dcterms:abstract>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2019-10-10T12:58:45Z</dcterms:available>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/47186"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dc:contributor>Weber, Joerg</dc:contributor>
    <dc:language>eng</dc:language>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
  </rdf:Description>
</rdf:RDF>

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