Amorphous Silicon Carbide for Photovoltaic Applications
| dc.contributor.author | Janz, Stefan | deu |
| dc.date.accessioned | 2011-03-24T17:52:23Z | deu |
| dc.date.available | 2011-03-24T17:52:23Z | deu |
| dc.date.issued | 2006 | deu |
| dc.description.abstract | Within this work amorphous SiC is investigated for its applicability in photovoltaic devices. The temperature stability and dopability of SiC makes this material very attractive for applications in this area. Physical basics of amorphous SiC networks and plasma processes are discussed and first measurements with FTIR of the different layer types show the complexity of the network. The special features of the plasma reactor such as high temperature deposition and two-source excitation are also discussed. Beside plasma etching I furthermore tested the etching behaviour of stoichiometric SiC in different wet chemical etching solutions. The results show that etching of SiC, especially when it is already annealed, is very difficult for both etching processes. Furthermore, stress measurements of our layers deposited and annealed at different temperatures show the change of stress from compressive ( | eng |
| dc.description.version | published | |
| dc.format.mimetype | application/pdf | deu |
| dc.identifier.ppn | 266453066 | deu |
| dc.identifier.uri | http://kops.uni-konstanz.de/handle/123456789/8957 | |
| dc.language.iso | eng | deu |
| dc.legacy.dateIssued | 2007 | deu |
| dc.rights | terms-of-use | deu |
| dc.rights.uri | https://rightsstatements.org/page/InC/1.0/ | deu |
| dc.subject | Rekristallisiertes Waferäquivalent | deu |
| dc.subject | Siliciumkarbid | deu |
| dc.subject | SiC | deu |
| dc.subject | Recrystallised Waferequivalent | deu |
| dc.subject | Siliconcarbid | deu |
| dc.subject | SiC | deu |
| dc.subject.ddc | 530 | deu |
| dc.subject.gnd | Photovoltaik | deu |
| dc.subject.gnd | Hochfrequenzplasma | deu |
| dc.subject.gnd | Siliciumhalbleiter | deu |
| dc.subject.gnd | Passivierung | deu |
| dc.subject.pacs | 61.46.Hk | deu |
| dc.subject.pacs | 61.46.-w | deu |
| dc.subject.pacs | 47.57.eb | deu |
| dc.subject.pacs | 47.54.De | deu |
| dc.title | Amorphous Silicon Carbide for Photovoltaic Applications | eng |
| dc.title.alternative | Amorphes Siliciumkarbid für photovoltaische Anwendungen | deu |
| dc.type | DOCTORAL_THESIS | deu |
| dspace.entity.type | Publication | |
| kops.citation.bibtex | @phdthesis{Janz2006Amorp-8957,
year={2006},
title={Amorphous Silicon Carbide for Photovoltaic Applications},
author={Janz, Stefan},
address={Konstanz},
school={Universität Konstanz}
} | |
| kops.citation.iso690 | JANZ, Stefan, 2006. Amorphous Silicon Carbide for Photovoltaic Applications [Dissertation]. Konstanz: University of Konstanz | deu |
| kops.citation.iso690 | JANZ, Stefan, 2006. Amorphous Silicon Carbide for Photovoltaic Applications [Dissertation]. Konstanz: University of Konstanz | eng |
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| kops.date.examination | 2006-12-08 | deu |
| kops.description.abstract | Im Rahmen dieser Arbeit wurde amorphes Siliciumkarbid auf seine Anwendbarkeit in der Photovoltaik untersucht. Dazu wurde ein Plasmareaktor für Hochtemperaturabscheidungen von uns weiterentwickelt und verschiedene Parameterräume für die Abscheidung eingeführt. Die abgeschiedenen Schichten wurden, wie in den ersten 6 Kapiteln dargestellt, umfassend untersucht. In Kapitel 1 werden die Grundlagen eines amorphen Netzwerkes eingeführt und speziell auf SiC erweitert. Erste FTIR Messungen zeigen die Komplexität des vorhandenen Netzwerkes. Weiters wird die plasma enhanced chemical vapour deposition (PECVD) eingeführt. In Kapitel 2 wird auf das Ätzverhalten von stöchiometrischem SiC eingegangen. Neben im Plasmareaktor entwickelten Ätzprozessen wird auch auf nasschemisches Ätzen eingegangen. Die Ergebnisse zeigen, dass SiC - und hier besonders bereits getempertes SiC - sehr schwer zu ätzen ist. Weiter werden Stressmessungen von bei verschiedenen Temperaturen abgeschiedenen und/oder getemperten SiC Schichten diskutiert. Es zeigt sich ein Wechsel von Zug- ( | deu |
| kops.description.openAccess | openaccessgreen | |
| kops.identifier.nbn | urn:nbn:de:bsz:352-opus-32019 | deu |
| kops.opus.id | 3201 | deu |
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