Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination

Kurzanzeige
dc.contributor.authorSperber, David
dc.contributor.authorHerguth, Axel
dc.contributor.authorHahn, Giso
dc.date.accessioned2016-11-25T14:32:46Z
dc.date.available2016-11-25T14:32:46Z
dc.date.issued2016eng
dc.description.abstractHydrogenated silicon nitride and aluminum oxide passivation layers were deposited on boron doped floatzone silicon wafers that underwent a high temperature firing step. The passivation quality was monitored during thermal treatment at 75°C, 150°C and 250°C in darkness or under illumination. It was found that the passivation quality of the specific layers under investigation is far from stable in the course of time showing both deterioration and improvement features on a time scale of minutes to weeks. Furthermore, it was found that these changes occur in both darkness and under illumination, whereupon (stronger) illumination accelerates the changes. Via corona charging and capacitance voltage experiments it could be shown that the observed changes in the short term are mainly caused by changes in the chemical passivation quality.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1016/j.egypro.2016.07.061eng
dc.identifier.ppn480171998
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/36101
dc.language.isoengeng
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.ddc530eng
dc.titleInstability of Dielectric Surface Passivation Quality at Elevated Temperature and Illuminationeng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Sperber2016Insta-36101,
  year={2016},
  doi={10.1016/j.egypro.2016.07.061},
  title={Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination},
  volume={92},
  journal={Energy Procedia},
  pages={211--217},
  author={Sperber, David and Herguth, Axel and Hahn, Giso}
}
kops.citation.iso690SPERBER, David, Axel HERGUTH, Giso HAHN, 2016. Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination. In: Energy Procedia. 2016, 92, pp. 211-217. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.061deu
kops.citation.iso690SPERBER, David, Axel HERGUTH, Giso HAHN, 2016. Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination. In: Energy Procedia. 2016, 92, pp. 211-217. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.061eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/36101">
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dc:creator>Sperber, David</dc:creator>
    <dcterms:title>Instability of Dielectric Surface Passivation Quality at Elevated Temperature and Illumination</dcterms:title>
    <dc:language>eng</dc:language>
    <dc:creator>Hahn, Giso</dc:creator>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:issued>2016</dcterms:issued>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36101/3/Sperber_0-374062.pdf"/>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/36101"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-11-25T14:32:46Z</dc:date>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <dcterms:abstract xml:lang="eng">Hydrogenated silicon nitride and aluminum oxide passivation layers were deposited on boron doped floatzone silicon wafers that underwent a high temperature firing step. The passivation quality was monitored during thermal treatment at 75°C, 150°C and 250°C in darkness or under illumination. It was found that the passivation quality of the specific layers under investigation is far from stable in the course of time showing both deterioration and improvement features on a time scale of minutes to weeks. Furthermore, it was found that these changes occur in both darkness and under illumination, whereupon (stronger) illumination accelerates the changes. Via corona charging and capacitance voltage experiments it could be shown that the observed changes in the short term are mainly caused by changes in the chemical passivation quality.</dcterms:abstract>
    <dc:contributor>Sperber, David</dc:contributor>
    <dcterms:rights rdf:resource="http://creativecommons.org/licenses/by-nc-nd/4.0/"/>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/36101/3/Sperber_0-374062.pdf"/>
    <dc:creator>Herguth, Axel</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2016-11-25T14:32:46Z</dcterms:available>
    <dc:rights>Attribution-NonCommercial-NoDerivatives 4.0 International</dc:rights>
  </rdf:Description>
</rdf:RDF>
kops.description.openAccessopenaccessgoldeng
kops.flag.knbibliographytrue
kops.identifier.nbnurn:nbn:de:bsz:352-0-374062
kops.sourcefieldEnergy Procedia. 2016, <b>92</b>, pp. 211-217. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.061deu
kops.sourcefield.plainEnergy Procedia. 2016, 92, pp. 211-217. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.061deu
kops.sourcefield.plainEnergy Procedia. 2016, 92, pp. 211-217. eISSN 1876-6102. Available under: doi: 10.1016/j.egypro.2016.07.061eng
relation.isAuthorOfPublication3e119409-b9f1-4f4c-bf73-8dde0c2dbf93
relation.isAuthorOfPublication1ab265ef-6078-4a9d-a66b-bcaaf18e5b4e
relation.isAuthorOfPublicatione82405a2-e86b-44d7-8126-8cfdd7e627c9
relation.isAuthorOfPublication.latestForDiscovery3e119409-b9f1-4f4c-bf73-8dde0c2dbf93
source.bibliographicInfo.fromPage211eng
source.bibliographicInfo.toPage217eng
source.bibliographicInfo.volume92eng
source.identifier.eissn1876-6102eng
source.periodicalTitleEnergy Procediaeng

Dateien

Originalbündel

Gerade angezeigt 1 - 1 von 1
Vorschaubild nicht verfügbar
Name:
Sperber_0-374062.pdf
Größe:
401.67 KB
Format:
Adobe Portable Document Format
Beschreibung:
Sperber_0-374062.pdf
Sperber_0-374062.pdfGröße: 401.67 KBDownloads: 349

Lizenzbündel

Gerade angezeigt 1 - 1 von 1
Vorschaubild nicht verfügbar
Name:
license.txt
Größe:
3.88 KB
Format:
Item-specific license agreed upon to submission
Beschreibung:
license.txt
license.txtGröße: 3.88 KBDownloads: 0

Sammlungen

Physik: Publikationen