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Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices : An Operando Hard X‐ray Photoelectron Spectroscopy Study

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2024

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Baumgarten, Lutz
Guido, Roberto
Gloskovskii, Andrei
Schlueter, Christoph
Mikolajick, Thomas
Schroeder, Uwe

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Deutsche Forschungsgemeinschaft (DFG): 458372836
Institutionen der Bundesrepublik Deutschland: 05K22VL1
Institutionen der Bundesrepublik Deutschland: 05KS7UM1
Institutionen der Bundesrepublik Deutschland: 05K10UMA

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physica status solidi (RRL) – Rapid Research Letters. Wiley. ISSN 1862-6254. eISSN 1862-6270. Verfügbar unter: doi: 10.1002/pssr.202400307

Zusammenfassung

Aluminum scandium nitride (Al1− xScxN) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the polar AlN structure are weakened, which enables ferroelectric switching below the dielectric breakdown field. However, one disadvantage of Sc doping is that it increases the material's tendency toward oxidation. Herein, the oxidation process of tungsten‐capped and uncapped Al0.83Sc0.17N thin films is investigated by hard X‐ray photoelectron spectroscopy (HAXPES). The samples is exposed to air for either 2 weeks or 6 months. HAXPES spectra indicate the replacement of nitrogen by oxygen and the tendency of oxygen to favor oxidation with Sc rather than Al. The appearance of an N 2 spectral feature thus can be directly related to the oxidation process. An oxidation model that mimics these spectroscopic results of the element‐specific oxidation processes within Al1− xScxN is presented. Finally, in operando HAXPES data of uncapped and capped AlScN‐capacitor stacks are interpreted using the proposed model.

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530 Physik

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ISO 690REHM, Oliver, Lutz BAUMGARTEN, Roberto GUIDO, Pia Maria DÜRING, Andrei GLOSKOVSKII, Christoph SCHLUETER, Thomas MIKOLAJICK, Uwe SCHROEDER, Martina MÜLLER, 2024. Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices : An Operando Hard X‐ray Photoelectron Spectroscopy Study. In: physica status solidi (RRL) – Rapid Research Letters. Wiley. ISSN 1862-6254. eISSN 1862-6270. Verfügbar unter: doi: 10.1002/pssr.202400307
BibTex
@article{Rehm2024-12-05LongT-71810,
  year={2024},
  doi={10.1002/pssr.202400307},
  title={Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices : An Operando Hard X‐ray Photoelectron Spectroscopy Study},
  issn={1862-6254},
  journal={physica status solidi (RRL) – Rapid Research Letters},
  author={Rehm, Oliver and Baumgarten, Lutz and Guido, Roberto and Düring, Pia Maria and Gloskovskii, Andrei and Schlueter, Christoph and Mikolajick, Thomas and Schroeder, Uwe and Müller, Martina}
}
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    <dcterms:abstract>Aluminum scandium nitride (Al&lt;sub&gt;1− x&lt;/sub&gt;Sc&lt;sub&gt;x&lt;/sub&gt;N) is a promising material for ferroelectric devices due to its large remanent polarization, scalability, and compatibility with semiconductor technology. By doping AlN with Sc, the bonds in the polar AlN structure are weakened, which enables ferroelectric switching below the dielectric breakdown field. However, one disadvantage of Sc doping is that it increases the material's tendency toward oxidation. Herein, the oxidation process of tungsten‐capped and uncapped Al&lt;sub&gt;0.83&lt;/sub&gt;Sc&lt;sub&gt;0.17&lt;/sub&gt;N thin films is investigated by hard X‐ray photoelectron spectroscopy (HAXPES). The samples is exposed to air for either 2 weeks or 6 months. HAXPES spectra indicate the replacement of nitrogen by oxygen and the tendency of oxygen to favor oxidation with Sc rather than Al. The appearance of an N 2 spectral feature thus can be directly related to the oxidation process. An oxidation model that mimics these spectroscopic results of the element‐specific oxidation processes within Al&lt;sub&gt;1− x&lt;/sub&gt;Sc&lt;sub&gt;x&lt;/sub&gt;N is presented. Finally, in operando HAXPES data of uncapped and capped AlScN‐capacitor stacks are interpreted using the proposed model.</dcterms:abstract>
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