Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer

dc.contributor.authorKaralic, Matija
dc.contributor.authorŠtrkalj, Antonio
dc.contributor.authorMasseroni, Michele
dc.contributor.authorChen, Wei
dc.contributor.authorMittag, Christopher
dc.contributor.authorTschirky, Thomas
dc.contributor.authorWegscheider, Werner
dc.contributor.authorIhn, Thomas
dc.contributor.authorEnsslin, Klaus
dc.contributor.authorZilberberg, Oded
dc.date.accessioned2021-10-12T08:20:04Z
dc.date.available2021-10-12T08:20:04Z
dc.date.issued2020eng
dc.description.abstractElectron optics in the solid state promises new functionality in electronics through the possibility of realizing nano- and micrometer-sized interferometers, lenses, collimators, and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p−n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Perot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p−n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics in two dimensions to encompass materials that exhibit band inversion and hybridization.eng
dc.description.versionpublishedeng
dc.identifier.arxiv1911.00424eng
dc.identifier.doi10.1103/PhysRevX.10.031007eng
dc.identifier.ppn1773337947
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/55218
dc.language.isoengeng
dc.rightsAttribution 4.0 International
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subject.ddc530eng
dc.titleElectron-Hole Interference in an Inverted-Band Semiconductor Bilayereng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Karalic2020Elect-55218,
  year={2020},
  doi={10.1103/PhysRevX.10.031007},
  title={Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer},
  number={3},
  volume={10},
  journal={Physical Review X},
  author={Karalic, Matija and Štrkalj, Antonio and Masseroni, Michele and Chen, Wei and Mittag, Christopher and Tschirky, Thomas and Wegscheider, Werner and Ihn, Thomas and Ensslin, Klaus and Zilberberg, Oded},
  note={Article Number: 031007}
}
kops.citation.iso690KARALIC, Matija, Antonio ŠTRKALJ, Michele MASSERONI, Wei CHEN, Christopher MITTAG, Thomas TSCHIRKY, Werner WEGSCHEIDER, Thomas IHN, Klaus ENSSLIN, Oded ZILBERBERG, 2020. Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer. In: Physical Review X. American Physical Society (APS). 2020, 10(3), 031007. eISSN 2160-3308. Available under: doi: 10.1103/PhysRevX.10.031007deu
kops.citation.iso690KARALIC, Matija, Antonio ŠTRKALJ, Michele MASSERONI, Wei CHEN, Christopher MITTAG, Thomas TSCHIRKY, Werner WEGSCHEIDER, Thomas IHN, Klaus ENSSLIN, Oded ZILBERBERG, 2020. Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer. In: Physical Review X. American Physical Society (APS). 2020, 10(3), 031007. eISSN 2160-3308. Available under: doi: 10.1103/PhysRevX.10.031007eng
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kops.sourcefieldPhysical Review X. American Physical Society (APS). 2020, <b>10</b>(3), 031007. eISSN 2160-3308. Available under: doi: 10.1103/PhysRevX.10.031007deu
kops.sourcefield.plainPhysical Review X. American Physical Society (APS). 2020, 10(3), 031007. eISSN 2160-3308. Available under: doi: 10.1103/PhysRevX.10.031007deu
kops.sourcefield.plainPhysical Review X. American Physical Society (APS). 2020, 10(3), 031007. eISSN 2160-3308. Available under: doi: 10.1103/PhysRevX.10.031007eng
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source.bibliographicInfo.articleNumber031007eng
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source.identifier.eissn2160-3308eng
source.periodicalTitlePhysical Review Xeng
source.publisherAmerican Physical Society (APS)eng

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