Orbital Analysis of Electronic States for vdW Material CoPS3 by Scanning Probe Microscopy

dc.contributor.authorFonin, Mikhail
dc.contributor.authorEnenkel, Vivien
dc.contributor.authorŠrut Rakić, Iva
dc.contributor.authorDedkov, Yuriy S.
dc.contributor.authorVoloshina, Elena
dc.date.accessioned2025-03-19T13:38:44Z
dc.date.available2025-03-19T13:38:44Z
dc.date.issued2025-03-20
dc.description.abstractTwo-dimensional planar antiferromagnets on the basis of transition metal phosphorus trichalcogenides (MPX3) have recently attracted much attention owing to the possibility of exfoliating these materials and potentially implementing them in spintronic heterostructures. For the purpose of designing particular interfaces with graphene or other two-dimensional materials, knowledge of the real-space atomic distributions in the MPX3 layers is essential. Here, by using scanning probe microscopy in combination with ab initio calculations, we investigate the real-space structure of van der Waals material CoPS3 down to the atomic level. We observe that the voltage dependence of scanning tunneling microscopy imaging shows distinct atomic signatures, which, upon comparison to the density functional theory results, can be directly attributed to different orbital contributions. The observed orbital fingerprints suggest the high spin ground state for Co2+ ions (S = 3/2) and energy-dependent hybridization effects between atomic orbitals of Co, P, and S, thus providing valuable insight into the magnetic and electronic states of this van der Waals material.
dc.description.versionpublisheddeu
dc.identifier.doi10.1021/acs.jpcc.5c00330
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/72751
dc.language.isoeng
dc.subject.ddc530
dc.titleOrbital Analysis of Electronic States for vdW Material CoPS<sub>3</sub> by Scanning Probe Microscopyeng
dc.typeJOURNAL_ARTICLE
dspace.entity.typePublication
kops.citation.bibtex
@article{Fonin2025-03-20Orbit-72751,
  title={Orbital Analysis of Electronic States for vdW Material CoPS<sub>3</sub> by Scanning Probe Microscopy},
  year={2025},
  doi={10.1021/acs.jpcc.5c00330},
  number={11},
  volume={129},
  issn={1932-7447},
  journal={The Journal of Physical Chemistry C},
  pages={5762--5768},
  author={Fonin, Mikhail and Enenkel, Vivien Anna-Lena and Šrut Rakić, Iva and Dedkov, Yuriy S. and Voloshina, Elena}
}
kops.citation.iso690FONIN, Mikhail, Vivien Anna-Lena ENENKEL, Iva ŠRUT RAKIĆ, Yuriy S. DEDKOV, Elena VOLOSHINA, 2025. Orbital Analysis of Electronic States for vdW Material CoPS3 by Scanning Probe Microscopy. In: The Journal of Physical Chemistry C. ACS Publications. 2025, 129(11), S. 5762-5768. ISSN 1932-7447. eISSN 1932-7455. Verfügbar unter: doi: 10.1021/acs.jpcc.5c00330deu
kops.citation.iso690FONIN, Mikhail, Vivien Anna-Lena ENENKEL, Iva ŠRUT RAKIĆ, Yuriy S. DEDKOV, Elena VOLOSHINA, 2025. Orbital Analysis of Electronic States for vdW Material CoPS3 by Scanning Probe Microscopy. In: The Journal of Physical Chemistry C. ACS Publications. 2025, 129(11), pp. 5762-5768. ISSN 1932-7447. eISSN 1932-7455. Available under: doi: 10.1021/acs.jpcc.5c00330eng
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    <dcterms:abstract>Two-dimensional planar antiferromagnets on the basis of transition metal phosphorus trichalcogenides (MPX&lt;sub&gt;3&lt;/sub&gt;) have recently attracted much attention owing to the possibility of exfoliating these materials and potentially implementing them in spintronic heterostructures. For the purpose of designing particular interfaces with graphene or other two-dimensional materials, knowledge of the real-space atomic distributions in the MPX&lt;sub&gt;3&lt;/sub&gt; layers is essential. Here, by using scanning probe microscopy in combination with ab initio calculations, we investigate the real-space structure of van der Waals material CoPS&lt;sub&gt;3&lt;/sub&gt; down to the atomic level. We observe that the voltage dependence of scanning tunneling microscopy imaging shows distinct atomic signatures, which, upon comparison to the density functional theory results, can be directly attributed to different orbital contributions. The observed orbital fingerprints suggest the high spin ground state for Co&lt;sup&gt;2+&lt;/sup&gt; ions (S = 3/2) and energy-dependent hybridization effects between atomic orbitals of Co, P, and S, thus providing valuable insight into the magnetic and electronic states of this van der Waals material.</dcterms:abstract>
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