Layer‐by‐Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrate

dc.contributor.authorSimon, Sabina
dc.contributor.authorVoloshina, Elena
dc.contributor.authorTesch, Julia
dc.contributor.authorFörschner, Felix
dc.contributor.authorEnenkel, Vivien
dc.contributor.authorHerbig, Charlotte
dc.contributor.authorKnispel, Timo
dc.contributor.authorTries, Alexander
dc.contributor.authorKröger, Jörg
dc.contributor.authorDedkov, Yuriy S.
dc.contributor.authorFonin, Mikhail
dc.date.accessioned2018-05-30T09:46:16Z
dc.date.available2018-05-30T09:46:16Z
dc.date.issued2018-03eng
dc.description.abstractThe electronic properties of graphene can be efficiently altered upon interaction with the underlying substrate resulting in a dramatic change of charge carrier behavior. Here, the evolution of the local electronic properties of epitaxial graphene on a metal upon the controlled formation of multilayers, which are produced by intercalation of atomic carbon in graphene/Ir(111), is investigated. Using scanning tunneling microscopy and Landau‐level spectroscopy, it is shown that for a monolayer and bilayers with small‐angle rotations, Landau levels are fully suppressed, indicating that the metal–graphene interaction is largely confined to the first graphene layer. Bilayers with large twist angles as well as twisted trilayers demonstrate a sequence of pronounced Landau levels characteristic for a free‐standing graphene monolayer pointing toward an effective decoupling of the top layer from the metal substrate. These findings give evidence for the controlled preparation of epitaxial graphene multilayers with a different degree of decoupling, which represent an ideal platform for future electronic and spintronic applications.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1002/smll.201703701eng
dc.identifier.pmid29450969eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/42474
dc.language.isoengeng
dc.subject.ddc530eng
dc.titleLayer‐by‐Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrateeng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Simon2018-03Layer-42474,
  year={2018},
  doi={10.1002/smll.201703701},
  title={Layer‐by‐Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrate},
  number={13},
  volume={14},
  issn={1613-6810},
  journal={Small},
  author={Simon, Sabina and Voloshina, Elena and Tesch, Julia and Förschner, Felix and Enenkel, Vivien Anna-Lena and Herbig, Charlotte and Knispel, Timo and Tries, Alexander and Kröger, Jörg and Dedkov, Yuriy S. and Fonin, Mikhail},
  note={Article Number: 1703701}
}
kops.citation.iso690SIMON, Sabina, Elena VOLOSHINA, Julia TESCH, Felix FÖRSCHNER, Vivien Anna-Lena ENENKEL, Charlotte HERBIG, Timo KNISPEL, Alexander TRIES, Jörg KRÖGER, Yuriy S. DEDKOV, Mikhail FONIN, 2018. Layer‐by‐Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrate. In: Small. 2018, 14(13), 1703701. ISSN 1613-6810. eISSN 1613-6829. Available under: doi: 10.1002/smll.201703701deu
kops.citation.iso690SIMON, Sabina, Elena VOLOSHINA, Julia TESCH, Felix FÖRSCHNER, Vivien Anna-Lena ENENKEL, Charlotte HERBIG, Timo KNISPEL, Alexander TRIES, Jörg KRÖGER, Yuriy S. DEDKOV, Mikhail FONIN, 2018. Layer‐by‐Layer Decoupling of Twisted Graphene Sheets Epitaxially Grown on a Metal Substrate. In: Small. 2018, 14(13), 1703701. ISSN 1613-6810. eISSN 1613-6829. Available under: doi: 10.1002/smll.201703701eng
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