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Nonlinear response of semiconductors driven by intense THz pulses

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2012

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Schubert, Olaf

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https://doi.org/10.1117/12.910002
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Ultrafast Phenomena and Nanophotonics XVI. Bellingham: SPIE, 2012, 82600M. SPIE Proceedings. 8260. eISSN 0277-786X. ISBN 978-0-8194-8903-6. Available under: doi: 10.1117/12.910002

Zusammenfassung

We present a review of our recent nonlinear spectroscopy experiments on bulk semiconductors performed using a novel source of ultra-intense multi-THz transients. The field-induced interband optical absorption in InP is studied on subcycle timescales. Our simulations corroborate the Franz-Keldysh effect as the main reason for the observed optical anomalies. The time-resolved four-wave mixing signals generated in InSb demonstrate clear signatures of a nonperturbative excitation regime and can be qualitatively reproduced by a simplified model of a two-level system driven far from the resonance.

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530 Physik

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SPIE OPTO, 21. Jan. 2012 - 26. Jan. 2012, San Francisco, California, USA
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ISO 690PASHKIN, Alexej, Friederike JUNGINGER, Christian SCHMIDT, Boris MAYER, Olaf SCHUBERT, Sebastian MÄHRLEIN, Rupert HUBER, Alfred LEITENSTORFER, 2012. Nonlinear response of semiconductors driven by intense THz pulses. SPIE OPTO. San Francisco, California, USA, 21. Jan. 2012 - 26. Jan. 2012. In: Ultrafast Phenomena and Nanophotonics XVI. Bellingham: SPIE, 2012, 82600M. SPIE Proceedings. 8260. eISSN 0277-786X. ISBN 978-0-8194-8903-6. Available under: doi: 10.1117/12.910002
BibTex
@inproceedings{Pashkin2012-06-19Nonli-49291,
  year={2012},
  doi={10.1117/12.910002},
  title={Nonlinear response of semiconductors driven by intense THz pulses},
  number={8260},
  isbn={978-0-8194-8903-6},
  publisher={SPIE},
  address={Bellingham},
  series={SPIE Proceedings},
  booktitle={Ultrafast Phenomena and Nanophotonics XVI},
  author={Pashkin, Alexej and Junginger, Friederike and Schmidt, Christian and Mayer, Boris and Schubert, Olaf and Mährlein, Sebastian and Huber, Rupert and Leitenstorfer, Alfred},
  note={Article Number: 82600M}
}
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