Publikation: Stacked PECVD backside dielectrics : an option for a firing stable passivation of industrial type screen-printed silicon solar cells
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2010
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DE SANTI, G.F., ed., H. OSSENBRINK, ed., P. HELM, ed.. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Munich, Germany: WIP-Renewable Energies, 2010, pp. 1875-1878. Available under: doi: 10.4229/25thEUPVSEC2010-2CV.2.48
Zusammenfassung
On the way to higher efficiencies and reduced costs material quality has to increase while wafer thickness decreases. With industrial screen-printed Cz solar cells reaching above 19% efficiency [1] the wellestablished Al-BSF is a limiting factor for further improvement. Simple and cost effective to deposit dielectrics with good characteristics for backside passivation have to be found. Our approach is a multilayer stack-system consisting of amorphous silicon carbide (SiCx), silicon oxide (SiO2) and silicon nitride (SiNx). This system enables us to achieve a low surface recombination velocity of 7.6 cm/s although a transparent SiCx layer with high carbon content (CH4/SiH4 flow rate of 8) is used. SiCx passivates n- and p-doped silicon at high deposition rates and low deposition temperatures. The cross compatibility of the used dielectrics enables us to deposit the stack system within one deposition step.
Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
passivation, PECVD, silicon carbide
Konferenz
25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion, 6. Sept. 2010 - 10. Sept. 2010, Valencia, Spain
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ISO 690
JOOS, Sebastian, Uwe HESS, Sven SEREN, Barbara TERHEIDEN, Giso HAHN, 2010. Stacked PECVD backside dielectrics : an option for a firing stable passivation of industrial type screen-printed silicon solar cells. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, 6. Sept. 2010 - 10. Sept. 2010. In: DE SANTI, G.F., ed., H. OSSENBRINK, ed., P. HELM, ed.. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Munich, Germany: WIP-Renewable Energies, 2010, pp. 1875-1878. Available under: doi: 10.4229/25thEUPVSEC2010-2CV.2.48BibTex
@inproceedings{Joos2010Stack-16009,
year={2010},
doi={10.4229/25thEUPVSEC2010-2CV.2.48},
title={Stacked PECVD backside dielectrics : an option for a firing stable passivation of industrial type screen-printed silicon solar cells},
publisher={WIP-Renewable Energies},
address={Munich, Germany},
booktitle={25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion},
pages={1875--1878},
editor={de Santi, G.F. and Ossenbrink, H. and Helm, P.},
author={Joos, Sebastian and Heß, Uwe and Seren, Sven and Terheiden, Barbara and Hahn, Giso}
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<dcterms:bibliographicCitation>Publ. in: 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion : proceedings of the international conference held 6-10 September 2010, in Valencia, Spain / G.F. de Santi, H. Ossenbrink and P. Helm (eds.). Munich, Germany : WIP-Renewable Energies, 2010. pp. 1875-1878</dcterms:bibliographicCitation>
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<dcterms:abstract xml:lang="eng">On the way to higher efficiencies and reduced costs material quality has to increase while wafer thickness decreases. With industrial screen-printed Cz solar cells reaching above 19% efficiency [1] the wellestablished Al-BSF is a limiting factor for further improvement. Simple and cost effective to deposit dielectrics with good characteristics for backside passivation have to be found. Our approach is a multilayer stack-system consisting of amorphous silicon carbide (SiCx), silicon oxide (SiO2) and silicon nitride (SiNx). This system enables us to achieve a low surface recombination velocity of 7.6 cm/s although a transparent SiCx layer with high carbon content (CH4/SiH4 flow rate of 8) is used. SiCx passivates n- and p-doped silicon at high deposition rates and low deposition temperatures. The cross compatibility of the used dielectrics enables us to deposit the stack system within one deposition step.</dcterms:abstract>
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