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Valley degeneracy breaking by magnetic field in monolayer MoSe2

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2014

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MacNeill, David
Heikes, Colin
Mak, Kin Fai
Zachary, Anderson
Zolyomi, Viktor
Park, Jiwoong
Ralph, Daniel C.

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http://arxiv.org/abs/1407.0686

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Using polarization-resolved photoluminescence spectroscopy, we investigate valley degeneracy breaking by out-of-plane magnetic field in back-gated monolayer MoSe2 devices. We observe a linear splitting of −0.22meV/T between luminescence peak energies in σ+ and σ− emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe2 couple photon handedness to the exciton valley degree of freedom, so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with magnetic field, to a degree that depends on the back-gate voltage. An applied magnetic field therefore provides effective strategies for control over the valley degree of freedom.

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ISO 690MACNEILL, David, Colin HEIKES, Kin Fai MAK, Anderson ZACHARY, Andor KORMÁNYOS, Viktor ZOLYOMI, Jiwoong PARK, Daniel C. RALPH, 2014. Valley degeneracy breaking by magnetic field in monolayer MoSe2
BibTex
@unpublished{MacNeill2014Valle-29851,
  year={2014},
  title={Valley degeneracy breaking by magnetic field in monolayer MoSe<sub>2</sub>},
  author={MacNeill, David and Heikes, Colin and Mak, Kin Fai and Zachary, Anderson and Kormányos, Andor and Zolyomi, Viktor and Park, Jiwoong and Ralph, Daniel C.}
}
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