Recharging dynamics of single nitrogen-vacancy centers in ultrapure diamond

Kurzanzeige
dc.contributor.authorBeha, Katja
dc.contributor.authorBatalov, Anton
dc.contributor.authorManson, Neil B.
dc.contributor.authorBratschitsch, Rudolf
dc.contributor.authorLeitenstorfer, Alfred
dc.date.accessioned2018-08-08T09:54:03Z
dc.date.available2018-08-08T09:54:03Z
dc.date.issued2013eng
dc.description.abstractPhotoluminescence excitation spectra of individual nitrogen-vacancy (NV) centers in diamond are investigated. Recharging dynamics between the neutral (NV0) and negatively charged (NV−) states are elucidated and the optimal excitation wavelength for NV− is found. A sharp resonance at an excitation wavelength of 521 nm facilitates an efficient conversion to NV0.eng
dc.description.versionpublishedeng
dc.identifier.doi10.1063/1.4848517eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/43019
dc.language.isoengeng
dc.subject.ddc530eng
dc.titleRecharging dynamics of single nitrogen-vacancy centers in ultrapure diamondeng
dc.typeINPROCEEDINGSeng
dspace.entity.typePublication
kops.citation.bibtex
@inproceedings{Beha2013Recha-43019,
  year={2013},
  doi={10.1063/1.4848517},
  title={Recharging dynamics of single nitrogen-vacancy centers in ultrapure diamond},
  number={1566},
  isbn={978-0-7354-1194-4},
  publisher={AIP},
  address={Melville, NY},
  series={AIP Conference Proceedings},
  booktitle={The physics of semiconductors : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012},
  pages={526--527},
  editor={Ihn, Thomas and Rössler, Clemens and Kozikov, Aleksey},
  author={Beha, Katja and Batalov, Anton and Manson, Neil B. and Bratschitsch, Rudolf and Leitenstorfer, Alfred}
}
kops.citation.iso690BEHA, Katja, Anton BATALOV, Neil B. MANSON, Rudolf BRATSCHITSCH, Alfred LEITENSTORFER, 2013. Recharging dynamics of single nitrogen-vacancy centers in ultrapure diamond. 31st International Conference on the Physics of Semiconductors (ICPS). Zurich, Switzerland, 29. Juli 2012 - 3. Aug. 2012. In: IHN, Thomas, ed., Clemens RÖSSLER, ed., Aleksey KOZIKOV, ed.. The physics of semiconductors : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. Melville, NY: AIP, 2013, pp. 526-527. AIP Conference Proceedings. 1566. eISSN 0094-243X. ISBN 978-0-7354-1194-4. Available under: doi: 10.1063/1.4848517deu
kops.citation.iso690BEHA, Katja, Anton BATALOV, Neil B. MANSON, Rudolf BRATSCHITSCH, Alfred LEITENSTORFER, 2013. Recharging dynamics of single nitrogen-vacancy centers in ultrapure diamond. 31st International Conference on the Physics of Semiconductors (ICPS). Zurich, Switzerland, Jul 29, 2012 - Aug 3, 2012. In: IHN, Thomas, ed., Clemens RÖSSLER, ed., Aleksey KOZIKOV, ed.. The physics of semiconductors : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. Melville, NY: AIP, 2013, pp. 526-527. AIP Conference Proceedings. 1566. eISSN 0094-243X. ISBN 978-0-7354-1194-4. Available under: doi: 10.1063/1.4848517eng
kops.citation.rdf
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/43019">
    <dcterms:abstract xml:lang="eng">Photoluminescence excitation spectra of individual nitrogen-vacancy (NV) centers in diamond are investigated. Recharging dynamics between the neutral (NV0) and negatively charged (NV−) states are elucidated and the optimal excitation wavelength for NV− is found. A sharp resonance at an excitation wavelength of 521 nm facilitates an efficient conversion to NV0.</dcterms:abstract>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:issued>2013</dcterms:issued>
    <dc:language>eng</dc:language>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Bratschitsch, Rudolf</dc:creator>
    <dc:creator>Batalov, Anton</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/43019"/>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-08-08T09:54:03Z</dc:date>
    <dc:creator>Beha, Katja</dc:creator>
    <dc:contributor>Beha, Katja</dc:contributor>
    <dc:contributor>Leitenstorfer, Alfred</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Manson, Neil B.</dc:creator>
    <dc:contributor>Manson, Neil B.</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:title>Recharging dynamics of single nitrogen-vacancy centers in ultrapure diamond</dcterms:title>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-08-08T09:54:03Z</dcterms:available>
    <dc:creator>Leitenstorfer, Alfred</dc:creator>
    <dc:contributor>Bratschitsch, Rudolf</dc:contributor>
    <dc:contributor>Batalov, Anton</dc:contributor>
  </rdf:Description>
</rdf:RDF>
kops.conferencefield31st International Conference on the Physics of Semiconductors (ICPS), 29. Juli 2012 - 3. Aug. 2012, Zurich, Switzerlanddeu
kops.date.conferenceEnd2012-08-03eng
kops.date.conferenceStart2012-07-29eng
kops.flag.knbibliographytrue
kops.location.conferenceZurich, Switzerlandeng
kops.sourcefieldIHN, Thomas, ed., Clemens RÖSSLER, ed., Aleksey KOZIKOV, ed.. <i>The physics of semiconductors : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012</i>. Melville, NY: AIP, 2013, pp. 526-527. AIP Conference Proceedings. 1566. eISSN 0094-243X. ISBN 978-0-7354-1194-4. Available under: doi: 10.1063/1.4848517deu
kops.sourcefield.plainIHN, Thomas, ed., Clemens RÖSSLER, ed., Aleksey KOZIKOV, ed.. The physics of semiconductors : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. Melville, NY: AIP, 2013, pp. 526-527. AIP Conference Proceedings. 1566. eISSN 0094-243X. ISBN 978-0-7354-1194-4. Available under: doi: 10.1063/1.4848517deu
kops.sourcefield.plainIHN, Thomas, ed., Clemens RÖSSLER, ed., Aleksey KOZIKOV, ed.. The physics of semiconductors : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. Melville, NY: AIP, 2013, pp. 526-527. AIP Conference Proceedings. 1566. eISSN 0094-243X. ISBN 978-0-7354-1194-4. Available under: doi: 10.1063/1.4848517eng
kops.title.conference31st International Conference on the Physics of Semiconductors (ICPS)eng
relation.isAuthorOfPublicationf23e55f7-a092-4bba-b512-1b3b61516d1d
relation.isAuthorOfPublicationd7e0aa4e-b777-426c-a428-ddc6f7e13a3f
relation.isAuthorOfPublicationbb6bb88d-c07e-448b-97ce-838649c4e76c
relation.isAuthorOfPublication7d20e97c-5021-46aa-bb78-57c584e51302
relation.isAuthorOfPublication.latestForDiscoveryf23e55f7-a092-4bba-b512-1b3b61516d1d
source.bibliographicInfo.fromPage526eng
source.bibliographicInfo.seriesNumber1566eng
source.bibliographicInfo.toPage527eng
source.contributor.editorIhn, Thomas
source.contributor.editorRössler, Clemens
source.contributor.editorKozikov, Aleksey
source.identifier.eissn0094-243Xeng
source.identifier.isbn978-0-7354-1194-4eng
source.publisherAIPeng
source.publisher.locationMelville, NYeng
source.relation.ispartofseriesAIP Conference Proceedingseng
source.titleThe physics of semiconductors : Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012eng

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