Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation

Kurzanzeige
dc.contributor.authorHuska, Klausdeu
dc.contributor.authorKlatt, Gregor
dc.contributor.authorHetterich, Juranadeu
dc.contributor.authorGeyer, Ulfdeu
dc.contributor.authorDekorsy, Thomas
dc.contributor.authorBastian, Georgdeu
dc.contributor.authorLemmer, Ulideu
dc.date.accessioned2011-03-24T17:55:12Zdeu
dc.date.available2011-03-24T17:55:12Zdeu
dc.date.issued2009deu
dc.description.abstractInterference-lithography and a self-aligning angle-evaporation technique are employed to fabricate interdigitated photoconductive terahertz (THz) emitters. The devices have a large active area for high directivity and submicron spaced electrodes for high internal electric fields at low bias voltages. The fabrication process offers the advantage that only one patterning step is needed to generate three isolated metallic structures. This avoids critical alignment and reduces the fabrication effort significantly. Voltage dependent THz emission is observed from 4 V upwards.eng
dc.description.versionpublished
dc.format.mimetypeapplication/pdfdeu
dc.identifier.citationFirst publ. in: Electronics Letters 45 (2009), 16, pp. 851-853deu
dc.identifier.doi10.1049/el.2009.1648
dc.identifier.ppn310931126deu
dc.identifier.urihttp://kops.uni-konstanz.de/handle/123456789/9287
dc.language.isoengdeu
dc.legacy.dateIssued2009deu
dc.rightsterms-of-usedeu
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/deu
dc.subject.ddc530deu
dc.titleLarge-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporationeng
dc.typeJOURNAL_ARTICLEdeu
dspace.entity.typePublication
kops.citation.bibtex
@article{Huska2009Large-9287,
  year={2009},
  doi={10.1049/el.2009.1648},
  title={Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation},
  number={16},
  volume={45},
  journal={Electronics Letters},
  pages={851--853},
  author={Huska, Klaus and Klatt, Gregor and Hetterich, Jurana and Geyer, Ulf and Dekorsy, Thomas and Bastian, Georg and Lemmer, Uli}
}
kops.citation.iso690HUSKA, Klaus, Gregor KLATT, Jurana HETTERICH, Ulf GEYER, Thomas DEKORSY, Georg BASTIAN, Uli LEMMER, 2009. Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation. In: Electronics Letters. 2009, 45(16), pp. 851-853. Available under: doi: 10.1049/el.2009.1648deu
kops.citation.iso690HUSKA, Klaus, Gregor KLATT, Jurana HETTERICH, Ulf GEYER, Thomas DEKORSY, Georg BASTIAN, Uli LEMMER, 2009. Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation. In: Electronics Letters. 2009, 45(16), pp. 851-853. Available under: doi: 10.1049/el.2009.1648eng
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kops.sourcefieldElectronics Letters. 2009, <b>45</b>(16), pp. 851-853. Available under: doi: 10.1049/el.2009.1648deu
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kops.sourcefield.plainElectronics Letters. 2009, 45(16), pp. 851-853. Available under: doi: 10.1049/el.2009.1648eng
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