Characterization of ingots and wafers for photovoltaic applications
| dc.contributor.author | Gruber, Markus | |
| dc.date.accessioned | 2012-09-10T10:10:51Z | deu |
| dc.date.available | 2012-09-10T10:10:51Z | deu |
| dc.date.issued | 2012 | deu |
| dc.description.abstract | Characterization of ingots and wafers is important for quality control and evaluation of new manufacturing processes. On ingots the mechanisms of charge carrier lifetime and resistivity measurements have been investigated, involving the determination of the instrument characteristics. Scheil's equation was confirmed, the iron concentration was determined and boron oxygen defects were detected in the outer layer. The protocols SEMI MF-1188-1107 and SEMI MF-1391-0704 for determination of interstitial oxygen and substitutional carbon concentrations by infrared spectroscopy require sample thicknesses, which exceed common wafer thicknesses. Effects on thinner samples have been studied. We found a relation between resolution, sample thickness and the appearance of interference fringes. Physical and mathematical efforts to get rid of the interferences failed. A recalibration for the conversion coefficients is done for use with lower resolutions. To evaluate defect engineering of interstitial iron, an iron mapping method has been implemented for a Microwave-Photoconductance-Decay device. | eng |
| dc.description.version | published | |
| dc.identifier.ppn | 370821009 | deu |
| dc.identifier.uri | http://kops.uni-konstanz.de/handle/123456789/20316 | |
| dc.language.iso | eng | deu |
| dc.legacy.dateIssued | 2012-09-10 | deu |
| dc.rights | terms-of-use | deu |
| dc.rights.uri | https://rightsstatements.org/page/InC/1.0/ | deu |
| dc.subject | interstitielles Eisen | deu |
| dc.subject | Mapping | deu |
| dc.subject | Ladungsträgerlebensdauer | deu |
| dc.subject.ddc | 530 | deu |
| dc.subject.gnd | Silicium | deu |
| dc.subject.gnd | Infrarotspektroskopie | deu |
| dc.subject.gnd | Photovoltaik | deu |
| dc.title | Characterization of ingots and wafers for photovoltaic applications | eng |
| dc.title.alternative | Charakterisierung von Ingots und Wafern für Anwendungen in der Photovoltaik | deu |
| dc.type | BSC_THESIS | deu |
| dspace.entity.type | Publication | |
| kops.citation.bibtex | @mastersthesis{Gruber2012Chara-20316,
year={2012},
title={Characterization of ingots and wafers for photovoltaic applications},
author={Gruber, Markus}
} | |
| kops.citation.iso690 | GRUBER, Markus, 2012. Characterization of ingots and wafers for photovoltaic applications [Bachelor thesis] | deu |
| kops.citation.iso690 | GRUBER, Markus, 2012. Characterization of ingots and wafers for photovoltaic applications [Bachelor thesis] | eng |
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| kops.description.abstract | Die Charakterisierung von Ingots (Ingot: Fachbegriff für einen Block aus mono- oder multikristallinem Silizium. Die monokristallinen Ingots sind aufgrund des Herstellungsprozesses meist rund, die multikristallinen eckig.) und Wafern (Wafer: Fachbegriff für dünne Siliziumscheibe) is wichtig für die Qualitätssicherung und Bewertung von neuen Fertigungsprozessen. Die Methoden zur Messung von Ladungsträgerlebensdauer und Widerstand von Ingots wurden untersucht, einschließlich der Bestimmung der Eigenschaften des Messinstruments. Wir haben die Gleichung von Scheil bestätigt, die Eisenkonzentration bestimmt und Bor-Sauerstoff Defekte in der äußeren Schicht nachgewiesen. Die Protokolle SEMI MF-1188-1107 und SEMI MF-1391-0704 zur Bestimmung des Gehalts an interstitiellem Sauerstoff und substitutionellem Kohlenstoff durch Infrarotspektroskopie erfordern größere Probendicken als die üblicher Wafer. Effekte durch dünnere Proben wurden untersucht. Wir fanden eine Beziehung zwischen Auflösung, Probendicke und dem Erscheinen von Interferenzmustern. Versuche, diese Interferenzmuster durch mathematische und physikalische Methoden zu beseitigen, scheiterten. Für geringere Auflösungen wurden die Umrechnungskoeffizienten neu bestimmt. Zur Auswertung von Methoden zur Verringerung des negativen Einflusses von interstitiellem Eisen wurde eine Methode zur ortsaufgelösten Bestimmung des Eisens mit Hilfe eines Microwave-Photoconductance-Decay (MWPCD)-Geräts umgesetzt. | deu |
| kops.description.openAccess | openaccessgreen | |
| kops.identifier.nbn | urn:nbn:de:bsz:352-203169 | deu |
| kops.submitter.email | markus.gruber@uni-konstanz.de | deu |
| relation.isAuthorOfPublication | 8df1f9cf-eaff-4e97-88ee-1f08100c47fd | |
| relation.isAuthorOfPublication.latestForDiscovery | 8df1f9cf-eaff-4e97-88ee-1f08100c47fd |
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