Publikation: P-type polymer-based Ag2S atomic switch for “tug of war” operation
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The Ag2S gap-type atomic switch based "tug of war" device is a promising element for building a new type of CMOS free neuromorphic computer-hardware. Since Ag+ cations are reduced during operation of the device, it was thought that the gap-material should be a n-type polymer. In this study, we revealed that the polymer bithiophene–oligoethyleneoxide (BTOE) doped poly(ethylene oxide) (PEO), which was used as gap-material in the first demonstration of the "tug of war", is a p-type polymer. For this we used impedance spectroscopy and transistor measurements. We elaborate on how the electrochemical processes in the "tug of war" devices could be explained in the case of p-type conductive gap-materials.
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LUTZ, Carolin, Tsuyoshi HASEGAWA, Takashi TSUCHIYA, Christoph ADELSBERGER, Ryoma HAYAKAWA, Toyohiro CHIKYOW, 2017. P-type polymer-based Ag2S atomic switch for “tug of war” operation. In: Japanese Journal of Applied Physics. 2017, 56(6S1), 06GF03. ISSN 0021-4922. eISSN 1347-4065. Available under: doi: 10.7567/JJAP.56.06GF03BibTex
@article{Lutz2017Ptype-41761, year={2017}, doi={10.7567/JJAP.56.06GF03}, title={P-type polymer-based Ag2S atomic switch for “tug of war” operation}, number={6S1}, volume={56}, issn={0021-4922}, journal={Japanese Journal of Applied Physics}, author={Lutz, Carolin and Hasegawa, Tsuyoshi and Tsuchiya, Takashi and Adelsberger, Christoph and Hayakawa, Ryoma and Chikyow, Toyohiro}, note={Article Number: 06GF03} }
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