P-type polymer-based Ag2S atomic switch for “tug of war” operation

Lutz, Carolin; Hasegawa, Tsuyoshi; Tsuchiya, Takashi; Adelsberger, Christoph; Hayakawa, Ryoma; Chikyow, Toyohiro

P-type polymer-based Ag2S atomic switch for “tug of war” operation

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Date

2017

Authors

Lutz, Carolin

Hasegawa, Tsuyoshi

Tsuchiya, Takashi

Adelsberger, Christoph

Hayakawa, Ryoma

Chikyow, Toyohiro

DOI (citable link)

10.7567/JJAP.56.06GF03

Collections

Physik

Publication type

Journal article

Publication status

Published

Published in

Japanese Journal of Applied Physics ; 56 (2017), 6S1. - 06GF03. - ISSN 0021-4922. - eISSN 1347-4065

Abstract

The Ag2S gap-type atomic switch based "tug of war" device is a promising element for building a new type of CMOS free neuromorphic computer-hardware. Since Ag+ cations are reduced during operation of the device, it was thought that the gap-material should be a n-type polymer. In this study, we revealed that the polymer bithiophene–oligoethyleneoxide (BTOE) doped poly(ethylene oxide) (PEO), which was used as gap-material in the first demonstration of the "tug of war", is a p-type polymer. For this we used impedance spectroscopy and transistor measurements. We elaborate on how the electrochemical processes in the "tug of war" devices could be explained in the case of p-type conductive gap-materials.

Subject (DDC)

530 Physics

Cite This

ISO 690

LUTZ, Carolin, Tsuyoshi HASEGAWA, Takashi TSUCHIYA, Christoph ADELSBERGER, Ryoma HAYAKAWA, Toyohiro CHIKYOW, 2017. P-type polymer-based Ag2S atomic switch for “tug of war” operation. In: Japanese Journal of Applied Physics. 56(6S1), 06GF03. ISSN 0021-4922. eISSN 1347-4065. Available under: doi: 10.7567/JJAP.56.06GF03

BibTex

@article{Lutz2017Ptype-41761,
  year={2017},
  doi={10.7567/JJAP.56.06GF03},
  title={P-type polymer-based Ag2S atomic switch for “tug of war” operation},
  number={6S1},
  volume={56},
  issn={0021-4922},
  journal={Japanese Journal of Applied Physics},
  author={Lutz, Carolin and Hasegawa, Tsuyoshi and Tsuchiya, Takashi and Adelsberger, Christoph and Hayakawa, Ryoma and Chikyow, Toyohiro},
  note={Article Number: 06GF03}
}

RDF

<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41761">
    <dc:creator>Chikyow, Toyohiro</dc:creator>
    <dc:creator>Hasegawa, Tsuyoshi</dc:creator>
    <dc:contributor>Chikyow, Toyohiro</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:contributor>Adelsberger, Christoph</dc:contributor>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:language>eng</dc:language>
    <dc:contributor>Hayakawa, Ryoma</dc:contributor>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:creator>Tsuchiya, Takashi</dc:creator>
    <dc:creator>Hayakawa, Ryoma</dc:creator>
    <dcterms:issued>2017</dcterms:issued>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-03-14T07:14:02Z</dc:date>
    <dc:contributor>Tsuchiya, Takashi</dc:contributor>
    <dc:creator>Lutz, Carolin</dc:creator>
    <dcterms:abstract xml:lang="eng">The Ag2S gap-type atomic switch based "tug of war" device is a promising element for building a new type of CMOS free neuromorphic computer-hardware. Since Ag+ cations are reduced during operation of the device, it was thought that the gap-material should be a n-type polymer. In this study, we revealed that the polymer bithiophene–oligoethyleneoxide (BTOE) doped poly(ethylene oxide) (PEO), which was used as gap-material in the first demonstration of the "tug of war", is a p-type polymer. For this we used impedance spectroscopy and transistor measurements. We elaborate on how the electrochemical processes in the "tug of war" devices could be explained in the case of p-type conductive gap-materials.</dcterms:abstract>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2018-03-14T07:14:02Z</dcterms:available>
    <dc:contributor>Hasegawa, Tsuyoshi</dc:contributor>
    <dc:contributor>Lutz, Carolin</dc:contributor>
    <dc:creator>Adelsberger, Christoph</dc:creator>
    <bibo:uri rdf:resource="https://kops.uni-konstanz.de/handle/123456789/41761"/>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dcterms:title>P-type polymer-based Ag2S atomic switch for “tug of war” operation</dcterms:title>
  </rdf:Description>
</rdf:RDF>

Bibliography of Konstanz

Yes