Suppression of hole-mediated ferromagnetism in Ga1−xMnxP by hydrogen

Kurzanzeige
dc.contributor.authorBihler, Christoph
dc.contributor.authorKraus, Michael
dc.contributor.authorBrandt, Martin S.
dc.contributor.authorGoennenwein, Sebastian T. B.
dc.contributor.authorOpel, Matthias
dc.contributor.authorScarpulla, Michael A.
dc.contributor.authorFarshchi, Rouin
dc.contributor.authorEstrada, David M.
dc.contributor.authorDubon, Oscar D.
dc.date.accessioned2021-03-05T09:27:44Z
dc.date.available2021-03-05T09:27:44Z
dc.date.issued2008eng
dc.description.abstractWe report the passivation of the Mn acceptors in Ga1−xMnxP upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of TC=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d5 configuration. Upon annealing, partial depassivation and a recovery of ferromagnetism are observed. These observations unambiguously demonstrate that the ferromagnetism in Ga1−xMnxP is carrier-mediated similar to Ga1−xMnxAs.eng
dc.description.versionpublishedeng
dc.identifier.arxiv0707.2777eng
dc.identifier.doi10.1063/1.2952045eng
dc.identifier.urihttps://kops.uni-konstanz.de/handle/123456789/53079
dc.language.isoengeng
dc.rightsterms-of-use
dc.rights.urihttps://rightsstatements.org/page/InC/1.0/
dc.subject.ddc530eng
dc.titleSuppression of hole-mediated ferromagnetism in Ga<sub>1−x</sub>Mn<sub>x</sub>P by hydrogeneng
dc.typeJOURNAL_ARTICLEeng
dspace.entity.typePublication
kops.citation.bibtex
@article{Bihler2008Suppr-53079,
  year={2008},
  doi={10.1063/1.2952045},
  title={Suppression of hole-mediated ferromagnetism in Ga<sub>1−x</sub>Mn<sub>x</sub>P by hydrogen},
  number={1},
  volume={104},
  issn={0021-8979},
  journal={Journal of Applied Physics},
  author={Bihler, Christoph and Kraus, Michael and Brandt, Martin S. and Goennenwein, Sebastian T. B. and Opel, Matthias and Scarpulla, Michael A. and Farshchi, Rouin and Estrada, David M. and Dubon, Oscar D.},
  note={Article Number: 013908}
}
kops.citation.iso690BIHLER, Christoph, Michael KRAUS, Martin S. BRANDT, Sebastian T. B. GOENNENWEIN, Matthias OPEL, Michael A. SCARPULLA, Rouin FARSHCHI, David M. ESTRADA, Oscar D. DUBON, 2008. Suppression of hole-mediated ferromagnetism in Ga1−xMnxP by hydrogen. In: Journal of Applied Physics. American Institute of Physics (AIP). 2008, 104(1), 013908. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2952045deu
kops.citation.iso690BIHLER, Christoph, Michael KRAUS, Martin S. BRANDT, Sebastian T. B. GOENNENWEIN, Matthias OPEL, Michael A. SCARPULLA, Rouin FARSHCHI, David M. ESTRADA, Oscar D. DUBON, 2008. Suppression of hole-mediated ferromagnetism in Ga1−xMnxP by hydrogen. In: Journal of Applied Physics. American Institute of Physics (AIP). 2008, 104(1), 013908. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2952045eng
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    <dcterms:abstract xml:lang="eng">We report the passivation of the Mn acceptors in Ga&lt;sub&gt;1−x&lt;/sub&gt;Mn&lt;sub&gt;x&lt;/sub&gt;P upon exposure to a hydrogen plasma. The as-grown films are nonmetallic and ferromagnetic with a Curie temperature of T&lt;sub&gt;C&lt;/sub&gt;=55 K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d&lt;sup&gt;5&lt;/sup&gt; configuration. Upon annealing, partial depassivation and a recovery of ferromagnetism are observed. These observations unambiguously demonstrate that the ferromagnetism in Ga&lt;sub&gt;1−x&lt;/sub&gt;Mn&lt;sub&gt;x&lt;/sub&gt;P is carrier-mediated similar to Ga&lt;sub&gt;1−x&lt;/sub&gt;Mn&lt;sub&gt;x&lt;/sub&gt;As.</dcterms:abstract>
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kops.sourcefieldJournal of Applied Physics. American Institute of Physics (AIP). 2008, <b>104</b>(1), 013908. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2952045deu
kops.sourcefield.plainJournal of Applied Physics. American Institute of Physics (AIP). 2008, 104(1), 013908. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2952045deu
kops.sourcefield.plainJournal of Applied Physics. American Institute of Physics (AIP). 2008, 104(1), 013908. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.2952045eng
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source.periodicalTitleJournal of Applied Physicseng
source.publisherAmerican Institute of Physics (AIP)eng

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