Electroless nickel and copper metallization : Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers

Lade...
Vorschaubild
Dateien
Braun_160100.pdf
Braun_160100.pdfGröße: 157.2 KBDownloads: 508
Datum
2010
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
DE SANTI, G.F., ed., H. OSSENBRINK, ed., P. HELM, ed.. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Munich, Germany: WIP-Renewable Energies, 2010, pp. 1892-1895. Available under: doi: 10.4229/25thEUPVSEC2010-2CV.2.51
Zusammenfassung

An alternative approach to the silver thick film metallization for the front side of silicon solar cells can be implemented by electroless nickel and copper deposition. One of the most challenging problems for a wetchemical metallization sequence using nickel and copper is the phenomenon of background plating. Hereby the metal is not only deposited on the opened emitter structure but also on the insulating PECVD silicon nitride layer which causes additional shading to the solar cell. Contact properties of the metallization like contact resistance, adhesion and line resistance must be optimized. The nickel-silicon contact can be enhanced by an additional sintering step. In this paper the requirements for an adequate nickel silicide formation are discussed and it is shown how to reduce the problem of background plating on PECVD SiNx:H surfaces.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
nickel plating, nickel silicide, background plating
Konferenz
25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion, 6. Sept. 2010 - 10. Sept. 2010, Valencia, Spain
Rezension
undefined / . - undefined, undefined
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Datensätze
Zitieren
ISO 690BRAUN, Stefan, Erkan EMRE, Bernd RAABE, Giso HAHN, 2010. Electroless nickel and copper metallization : Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiNx:H layers. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Valencia, Spain, 6. Sept. 2010 - 10. Sept. 2010. In: DE SANTI, G.F., ed., H. OSSENBRINK, ed., P. HELM, ed.. 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion. Munich, Germany: WIP-Renewable Energies, 2010, pp. 1892-1895. Available under: doi: 10.4229/25thEUPVSEC2010-2CV.2.51
BibTex
@inproceedings{Braun2010Elect-16010,
  year={2010},
  doi={10.4229/25thEUPVSEC2010-2CV.2.51},
  title={Electroless nickel and copper metallization : Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiN<sub>x</sub>:H layers},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion},
  pages={1892--1895},
  editor={de Santi, G.F. and Ossenbrink, H. and Helm, P.},
  author={Braun, Stefan and Emre, Erkan and Raabe, Bernd and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/16010">
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:contributor>Raabe, Bernd</dc:contributor>
    <dc:creator>Hahn, Giso</dc:creator>
    <dc:contributor>Emre, Erkan</dc:contributor>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T09:09:24Z</dc:date>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/16010/2/Braun_160100.pdf"/>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/16010"/>
    <dc:contributor>Braun, Stefan</dc:contributor>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dcterms:issued>2010</dcterms:issued>
    <dc:rights>terms-of-use</dc:rights>
    <dcterms:bibliographicCitation>Publ. in: 25th European Photovoltaic Solar Energy Conference and Exhibition. 5th World Conference on photovoltaic Energy Conversion : proceedings of the international conference held 6-10 September 2010, in Valencia, Spain / G.F. de Santi, H. Ossenbrink and P. Helm (eds.). Munich, Germany : WIP-Renewable Energies, 2010. pp. 1892-1895</dcterms:bibliographicCitation>
    <dc:creator>Raabe, Bernd</dc:creator>
    <dcterms:abstract xml:lang="eng">An alternative approach to the silver thick film metallization for the front side of silicon solar cells can be implemented by electroless nickel and copper deposition. One of the most challenging problems for a wetchemical metallization sequence using nickel and copper is the phenomenon of background plating. Hereby the metal is not only deposited on the opened emitter structure but also on the insulating PECVD silicon nitride layer which causes additional shading to the solar cell. Contact properties of the metallization like contact resistance, adhesion and line resistance must be optimized. The nickel-silicon contact can be enhanced by an additional sintering step. In this paper the requirements for an adequate nickel silicide formation are discussed and it is shown how to reduce the problem of background plating on PECVD SiNx:H surfaces.</dcterms:abstract>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/16010/2/Braun_160100.pdf"/>
    <dc:creator>Braun, Stefan</dc:creator>
    <dcterms:title>Electroless nickel and copper metallization : Contact formation on crystalline silicon and background plating behavior on PECVD silicon SiN&lt;sub&gt;x&lt;/sub&gt;:H layers</dcterms:title>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dc:language>eng</dc:language>
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-10-05T09:09:24Z</dcterms:available>
    <dc:creator>Emre, Erkan</dc:creator>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen