Investigations on the Recombination Activity of Grain Boundaries in mc Silicon


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ZUSCHLAG, Annika, Gabriel MICARD, Johannes JUNGE, Martin KAES, Sven SEREN, Giso HAHN, Gianluca COLETTI, Guobin JIA, Winfried SEIFERT, 2008. Investigations on the Recombination Activity of Grain Boundaries in mc Silicon. 2008 33rd IEEE Photovolatic Specialists Conference (PVSC). San Diego, CA, USA, 11. Mai 2008 - 16. Mai 2008. In: 2008 33rd IEEE Photovolatic Specialists Conference. IEEE, pp. 1-5. ISSN 0160-8371. ISBN 978-1-4244-1640-0. Available under: doi: 10.1109/PVSC.2008.4922800

@inproceedings{Zuschlag2008-05Inves-974, title={Investigations on the Recombination Activity of Grain Boundaries in mc Silicon}, year={2008}, doi={10.1109/PVSC.2008.4922800}, isbn={978-1-4244-1640-0}, issn={0160-8371}, publisher={IEEE}, booktitle={2008 33rd IEEE Photovolatic Specialists Conference}, pages={1--5}, author={Zuschlag, Annika and Micard, Gabriel and Junge, Johannes and Kaes, Martin and Seren, Sven and Hahn, Giso and Coletti, Gianluca and Jia, Guobin and Seifert, Winfried} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dc:creator>Zuschlag, Annika</dc:creator> <dc:contributor>Zuschlag, Annika</dc:contributor> <dspace:hasBitstream rdf:resource=""/> <dc:creator>Micard, Gabriel</dc:creator> <bibo:uri rdf:resource=""/> <dcterms:bibliographicCitation>Publ. in: Proceedings of the 33rd IEEE Photovoltaic Specialists Conference, San Diego 2008. US: Institute of Electrical and Electronics Engineers, 2008</dcterms:bibliographicCitation> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Hahn, Giso</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Kaes, Martin</dc:contributor> <dc:date rdf:datatype="">2011-03-22T17:52:34Z</dc:date> <dc:creator>Seifert, Winfried</dc:creator> <dc:contributor>Jia, Guobin</dc:contributor> <dc:contributor>Seifert, Winfried</dc:contributor> <dcterms:isPartOf rdf:resource=""/> <dc:creator>Junge, Johannes</dc:creator> <dcterms:rights rdf:resource=""/> <dc:contributor>Seren, Sven</dc:contributor> <dc:creator>Seren, Sven</dc:creator> <dc:contributor>Hahn, Giso</dc:contributor> <dspace:isPartOfCollection rdf:resource=""/> <dcterms:abstract xml:lang="eng">This paper focuses on the limitation of the effective intra-grain minority charge carrier diffusion length and surface recombination velocity at grain boundaries. Both can be extracted in principle from Laser- and Electron Beam Induced Current measurements (LBIC and EBIC). Multicrystalline floatzone (mc FZ) silicon with different grain sizes was processed to solar cell and characterized by LBIC and EBIC. A theoretical model is used which can be applied to measured LBIC or EBIC profiles in order to obtain values for the effective intra-grain diffusion length and the recombination velocity at grain boundaries. The obtained results are very useful for cost effective small grained mc silicon materials, e.g. Ribbon Growth on Substrate (RGS).</dcterms:abstract> <dcterms:hasPart rdf:resource=""/> <dcterms:issued>2008-05</dcterms:issued> <dc:contributor>Micard, Gabriel</dc:contributor> <dc:creator>Coletti, Gianluca</dc:creator> <dc:rights>terms-of-use</dc:rights> <dcterms:available rdf:datatype="">2011-03-22T17:52:34Z</dcterms:available> <dc:contributor>Coletti, Gianluca</dc:contributor> <dc:contributor>Junge, Johannes</dc:contributor> <dc:creator>Kaes, Martin</dc:creator> <dc:creator>Jia, Guobin</dc:creator> <dcterms:title>Investigations on the Recombination Activity of Grain Boundaries in mc Silicon</dcterms:title> </rdf:Description> </rdf:RDF>

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