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Crystalline Si thin film n-type solar cells : a screen printed rear junction approach

Crystalline Si thin film n-type solar cells : a screen printed rear junction approach

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BUCK, Thomas, Annette HELFRICHT, Radovan KOPECEK, Kristian PETER, Giso HAHN, Wolfgang APPEL, 2007. Crystalline Si thin film n-type solar cells : a screen printed rear junction approach. EU PVSEC. Milan, Italy, 3. Sep 2007 - 7. Sep 2007. In: The compiled state-of-the-art of PV solar technology and deployment : 22 nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. EU PVSEC. Milan, Italy, 3. Sep 2007 - 7. Sep 2007. München:WIP-Renewable Energies, pp. 1898-1901

@inproceedings{Buck2007Cryst-954, title={Crystalline Si thin film n-type solar cells : a screen printed rear junction approach}, year={2007}, address={München}, publisher={WIP-Renewable Energies}, booktitle={The compiled state-of-the-art of PV solar technology and deployment : 22 nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007}, pages={1898--1901}, author={Buck, Thomas and Helfricht, Annette and Kopecek, Radovan and Peter, Kristian and Hahn, Giso and Appel, Wolfgang} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/954"> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:27Z</dcterms:available> <dc:contributor>Peter, Kristian</dc:contributor> <dc:rights>deposit-license</dc:rights> <dc:creator>Buck, Thomas</dc:creator> <dc:creator>Helfricht, Annette</dc:creator> <dc:creator>Appel, Wolfgang</dc:creator> <dcterms:issued>2007</dcterms:issued> <dcterms:bibliographicCitation>The compiled state-of-the-art of PV solar technology and deployment : 22nd European Photovoltaic Solar Energy Conference, EU PVSEC ; proceedings of the international conference, held in Milan, Italy, 3 - 7 September 2007. München: WIP-Renewable Energies, 2007, pp. 1898-1901</dcterms:bibliographicCitation> <dc:contributor>Appel, Wolfgang</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:27Z</dc:date> <dc:contributor>Buck, Thomas</dc:contributor> <dc:contributor>Helfricht, Annette</dc:contributor> <dcterms:title>Crystalline Si thin film n-type solar cells : a screen printed rear junction approach</dcterms:title> <dc:creator>Hahn, Giso</dc:creator> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> <dc:creator>Peter, Kristian</dc:creator> <dcterms:abstract xml:lang="eng">In this work we present large area crystalline silicon thin film n-type solar cells. The rear junction is formed by growth of an n-type Chemical Vapour Deposition (CVD) layer on highly p+-doped substrate.The arising rear side emitter geometry of the solar cell features an n+ phosphorous diffused front-surface-field on n-type thin absorber deposited by high temperature CVD. Apart from the deposition of the thin film all processing steps rely on already industrially implemented processing steps such as open tube furnace POCl3 diffusion, PECVD SiNx deposition and thick film screen printing technique. Following simulations, different base doping levels of the CVD layers were tested. The best 96 cm2 large solar cell with a 30 μm thick epitaxial wafer equivalent showed an efficiency of 13.5% for a p+ Cz-Si substrate and 12.3% for the best mc-Si device, respectively.</dcterms:abstract> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/954"/> <dc:contributor>Kopecek, Radovan</dc:contributor> <dc:creator>Kopecek, Radovan</dc:creator> <dc:language>eng</dc:language> </rdf:Description> </rdf:RDF>

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