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Submicron contacts for electrical characterization of semiconducting WS2 thin films

Submicron contacts for electrical characterization of semiconducting WS2 thin films

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BALLIF, Christophe, Manfred REGULA, Francis LÉVY, Frank BURMEISTER, Claudia SCHÄFLE, Thomas MATTHES, Paul LEIDERER, Philippe NIEDERMANN, W. GUTMANNSBAUER, Ron BUCHER, 1998. Submicron contacts for electrical characterization of semiconducting WS2 thin films. In: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films. 16(3), pp. 1239-1243

@article{Ballif1998Submi-9515, title={Submicron contacts for electrical characterization of semiconducting WS2 thin films}, year={1998}, doi={10.1116/1.581266}, number={3}, volume={16}, journal={Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films}, pages={1239--1243}, author={Ballif, Christophe and Regula, Manfred and Lévy, Francis and Burmeister, Frank and Schäfle, Claudia and Matthes, Thomas and Leiderer, Paul and Niedermann, Philippe and Gutmannsbauer, W. and Bucher, Ron} }

Bucher, Ron Bucher, Ron Lévy, Francis Regula, Manfred Leiderer, Paul Ballif, Christophe 2011-03-24T17:57:37Z application/pdf First publ. in: Journal of Vacuum Science and Technology / A, Vacuum, Surfaces, and Films, Vol. 16 (1998), 3, pp. 1239-1243 Burmeister, Frank Leiderer, Paul Gutmannsbauer, W. Submicron contacts for electrical characterization of semiconducting WS2 thin films eng Ballif, Christophe 1998 Niedermann, Philippe Matthes, Thomas 2011-03-24T17:57:37Z Matthes, Thomas Lévy, Francis We report a new method to characterize the local electronic properties of polycrystalline semiconducting thin films. A lattice of triangular gold electrodes, with a typical area of 0.2 mm2, is evaporated on a p-type WS2 film. With the help of a conductive atomic force microscope, the current voltage characteristics of the contacts established between the gold electrodes and the WS2 film are measured. A linear dependence of the current versus voltage is obtained on gold triangles in contact with grain edges. This indicates a high level of doping or degeneracy of the semiconductor at the grain edges. The electrodes deposited on flat WS2 crystallites form rectifying diodes with the underlying grains. Barrier heights of 0.56 0.74 eV and diode ideality factors between 1.15 and 2 are determined. Under illumination, open-circuit voltages up to 500 mV can be measured on some contacts. A short response time of the photocurrent is observed (100 ms), linked to trapping effects<br />at grain boundaries. deposit-license Regula, Manfred Gutmannsbauer, W. Schäfle, Claudia Niedermann, Philippe Schäfle, Claudia Burmeister, Frank

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