Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells
| Type of Publication: | Contribution to a conference collection |
| URI (citable link): | http://nbn-resolving.de/urn:nbn:de:bsz:352-opus-103826 |
| Author: | Herguth, Axel; Hahn, Giso |
| Year of publication: | 2009 |
| Conference: | 24th European Photovoltaic Solar Energy Conference, Sep 21, 2009 - Sep 25, 2009, Hamburg |
| Published in: | Proceedings of the 24th European Photovoltaic Solar Energy Conference. - Munich, Germany : WIP-Renewable Energies, 2009. - pp. 2012-2014. - ISBN 3-936338-25-6 |
| DOI (citable link): | https://dx.doi.org/10.4229/24thEUPVSEC2009-2DV.1.7 |
| Summary: |
This contribution targets on the stability of screen printed silver front contacts on n-type emitters of crystalline silicon solar cells during thermal treatment steps in the range of 200-300°C which could be of importance for e.g. some dielectric layers or Regeneration. As measurements of the contact resistance taken by TLM technique reveal, the contact resistance may seriously increase within the thermal treatment steps giving rise to a significant degradation of the fill factor of the solar cell. Furthermore it is found that the TLM technique itself has an influence on the measurements.
|
| Subject (DDC): | 530 Physics |
| Keywords: | Front contact, Thermal, Degradation |
| Link to License: | In Copyright |
| Bibliography of Konstanz: | Yes |
Cite This
Files in this item
![[PDF]](/themes/Kops/images/mimes/pdf.png "PDF file"){kind=small}
HERGUTH, Axel, Giso HAHN, 2009. Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells. 24th European Photovoltaic Solar Energy Conference. Hamburg, Sep 21, 2009 - Sep 25, 2009. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference. Munich, Germany:WIP-Renewable Energies, pp. 2012-2014. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2DV.1.7
@inproceedings{Herguth2009Tempe-946, title={Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells}, year={2009}, doi={10.4229/24thEUPVSEC2009-2DV.1.7}, isbn={3-936338-25-6}, address={Munich, Germany}, publisher={WIP-Renewable Energies}, booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference}, pages={2012--2014}, author={Herguth, Axel and Hahn, Giso} }
<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/946"> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:24Z</dcterms:available> <dc:contributor>Hahn, Giso</dc:contributor> <dcterms:bibliographicCitation>First publ. in: Proceedings of the 24th European Photovoltaic Solar Energy Conference, September 2009, Hamburg. München : WIP - Wirtschaft und Infrastruktur, 2009, pp. 2012-2014</dcterms:bibliographicCitation> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/946/1/Herguth_opus-103826.pdf"/> <dcterms:issued>2009</dcterms:issued> <dc:creator>Herguth, Axel</dc:creator> <dc:contributor>Herguth, Axel</dc:contributor> <dcterms:abstract xml:lang="eng">This contribution targets on the stability of screen printed silver front contacts on n-type emitters of crystalline silicon solar cells during thermal treatment steps in the range of 200-300°C which could be of importance for e.g. some dielectric layers or Regeneration. As measurements of the contact resistance taken by TLM technique reveal, the contact resistance may seriously increase within the thermal treatment steps giving rise to a significant degradation of the fill factor of the solar cell. Furthermore it is found that the TLM technique itself has an influence on the measurements.</dcterms:abstract> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:rights>terms-of-use</dc:rights> <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/946"/> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:24Z</dc:date> <dc:creator>Hahn, Giso</dc:creator> <dc:language>eng</dc:language> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/946/1/Herguth_opus-103826.pdf"/> <dcterms:title>Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells</dcterms:title> </rdf:Description> </rdf:RDF>
Downloads since Oct 1, 2014 (Information about access statistics)
| Herguth_opus-103826.pdf | 55 |
This item appears in the following Collection(s)
Search KOPS
Browse
My Account
