Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells

Lade...
Vorschaubild
Dateien
Herguth_opus-103826.pdf
Herguth_opus-103826.pdfGröße: 519.9 KBDownloads: 78
Datum
2009
Herausgeber:innen
Kontakt
ISSN der Zeitschrift
Electronic ISSN
ISBN
Bibliografische Daten
Verlag
Schriftenreihe
Auflagebezeichnung
ArXiv-ID
Internationale Patentnummer
Angaben zur Forschungsförderung
Projekt
Open Access-Veröffentlichung
Open Access Green
Sammlungen
Core Facility der Universität Konstanz
Gesperrt bis
Titel in einer weiteren Sprache
Forschungsvorhaben
Organisationseinheiten
Zeitschriftenheft
Publikationstyp
Beitrag zu einem Konferenzband
Publikationsstatus
Published
Erschienen in
Proceedings of the 24th European Photovoltaic Solar Energy Conference. Munich, Germany: WIP-Renewable Energies, 2009, pp. 2012-2014. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2DV.1.7
Zusammenfassung

This contribution targets on the stability of screen printed silver front contacts on n-type emitters of crystalline silicon solar cells during thermal treatment steps in the range of 200-300°C which could be of importance for e.g. some dielectric layers or Regeneration. As measurements of the contact resistance taken by TLM technique reveal, the contact resistance may seriously increase within the thermal treatment steps giving rise to a significant degradation of the fill factor of the solar cell. Furthermore it is found that the TLM technique itself has an influence on the measurements.

Zusammenfassung in einer weiteren Sprache
Fachgebiet (DDC)
530 Physik
Schlagwörter
Front contact, Thermal, Degradation
Konferenz
24th European Photovoltaic Solar Energy Conference, 21. Sept. 2009 - 25. Sept. 2009, Hamburg
Rezension
undefined / . - undefined, undefined
Zitieren
ISO 690HERGUTH, Axel, Giso HAHN, 2009. Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells. 24th European Photovoltaic Solar Energy Conference. Hamburg, 21. Sept. 2009 - 25. Sept. 2009. In: Proceedings of the 24th European Photovoltaic Solar Energy Conference. Munich, Germany: WIP-Renewable Energies, 2009, pp. 2012-2014. ISBN 3-936338-25-6. Available under: doi: 10.4229/24thEUPVSEC2009-2DV.1.7
BibTex
@inproceedings{Herguth2009Tempe-946,
  year={2009},
  doi={10.4229/24thEUPVSEC2009-2DV.1.7},
  title={Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells},
  isbn={3-936338-25-6},
  publisher={WIP-Renewable Energies},
  address={Munich, Germany},
  booktitle={Proceedings of the 24th European Photovoltaic Solar Energy Conference},
  pages={2012--2014},
  author={Herguth, Axel and Hahn, Giso}
}
RDF
<rdf:RDF
    xmlns:dcterms="http://purl.org/dc/terms/"
    xmlns:dc="http://purl.org/dc/elements/1.1/"
    xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#"
    xmlns:bibo="http://purl.org/ontology/bibo/"
    xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#"
    xmlns:foaf="http://xmlns.com/foaf/0.1/"
    xmlns:void="http://rdfs.org/ns/void#"
    xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > 
  <rdf:Description rdf:about="https://kops.uni-konstanz.de/server/rdf/resource/123456789/946">
    <dc:contributor>Hahn, Giso</dc:contributor>
    <dcterms:abstract xml:lang="eng">This contribution targets on the stability of screen printed silver front contacts on n-type emitters of crystalline silicon solar cells during thermal treatment steps in the range of 200-300°C which could be of importance for e.g. some dielectric layers or Regeneration. As measurements of the contact resistance taken by TLM technique reveal, the contact resistance may seriously increase within the thermal treatment steps giving rise to a significant degradation of the fill factor of the solar cell. Furthermore it is found that the TLM technique itself has an influence on the measurements.</dcterms:abstract>
    <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/946/1/Herguth_opus-103826.pdf"/>
    <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/946"/>
    <dcterms:rights rdf:resource="https://rightsstatements.org/page/InC/1.0/"/>
    <dc:creator>Hahn, Giso</dc:creator>
    <foaf:homepage rdf:resource="http://localhost:8080/"/>
    <dc:rights>terms-of-use</dc:rights>
    <dc:creator>Herguth, Axel</dc:creator>
    <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:24Z</dcterms:available>
    <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/946/1/Herguth_opus-103826.pdf"/>
    <dc:contributor>Herguth, Axel</dc:contributor>
    <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/>
    <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/server/rdf/resource/123456789/41"/>
    <dcterms:bibliographicCitation>First publ. in: Proceedings of the 24th European Photovoltaic Solar Energy Conference, September 2009, Hamburg. München : WIP - Wirtschaft und Infrastruktur, 2009, pp. 2012-2014</dcterms:bibliographicCitation>
    <dcterms:title>Temperature induced degradation of the contact resistance of Ag-screen printed p-type silicon solar cells</dcterms:title>
    <dcterms:issued>2009</dcterms:issued>
    <dc:language>eng</dc:language>
    <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:24Z</dc:date>
  </rdf:Description>
</rdf:RDF>
Interner Vermerk
xmlui.Submission.submit.DescribeStep.inputForms.label.kops_note_fromSubmitter
Kontakt
URL der Originalveröffentl.
Prüfdatum der URL
Prüfungsdatum der Dissertation
Finanzierungsart
Kommentar zur Publikation
Allianzlizenz
Corresponding Authors der Uni Konstanz vorhanden
Internationale Co-Autor:innen
Universitätsbibliographie
Ja
Begutachtet
Diese Publikation teilen