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Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier

Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier

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RÜDIGER, Ulrich, Raffaella CALARCO, Ulrich MAY, K. SAMM, Jan O. HAUCH, Harish KITTUR, Martin SPERLICH, Gernot GÜNTHERODT, 2001. Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier. In: Journal of Applied Physics. 89(11), pp. 7573-7575. ISSN 0021-8979. eISSN 1089-7550

@article{Rudiger2001Tempe-9445, title={Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier}, year={2001}, doi={10.1063/1.1361055}, number={11}, volume={89}, issn={0021-8979}, journal={Journal of Applied Physics}, pages={7573--7575}, author={Rüdiger, Ulrich and Calarco, Raffaella and May, Ulrich and Samm, K. and Hauch, Jan O. and Kittur, Harish and Sperlich, Martin and Güntherodt, Gernot} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/9445"> <dc:creator>Kittur, Harish</dc:creator> <dc:format>application/pdf</dc:format> <dc:contributor>Hauch, Jan O.</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9445"/> <dcterms:bibliographicCitation>First publ. in: Journal of Applied Physics 89 (2001), 11, pp. 7573-7575</dcterms:bibliographicCitation> <dc:creator>Hauch, Jan O.</dc:creator> <dc:language>eng</dc:language> <dc:creator>Güntherodt, Gernot</dc:creator> <dc:contributor>Güntherodt, Gernot</dc:contributor> <dcterms:title>Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier</dcterms:title> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:56:36Z</dc:date> <dc:creator>Sperlich, Martin</dc:creator> <dc:creator>Samm, K.</dc:creator> <dc:contributor>Calarco, Raffaella</dc:contributor> <dc:contributor>Samm, K.</dc:contributor> <dc:contributor>Rüdiger, Ulrich</dc:contributor> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dcterms:abstract xml:lang="eng">Tunnel junctions of Co(10 nm)/AlOx (nominally 2 nm)/Co(20 nm) have been prepared by molecular beam epitaxy applying a shadow mask technique in conjunction with an UV light-assisted oxidation process of the AlOx barrier. The quality of the AlOx barrier has been proven by x-ray photoelectron spectroscopy and temperature dependent tunneling magnetoresistance (TMR) measurements. Optimum-oxidized tunnel junctions show a TMR of 20% at 285 K and up to 36% at 100 K. At 285 K the TMR values as a function of oxidation time are not symmetric about the optimum time. For underoxidized junctions the TMR is reduced more strongly than for overoxidized junctions. The temperature dependence of the junction s resistance is a clear and reliable indicator whether pinholes (or imperfections)contribute to the conduction across the barrier.</dcterms:abstract> <dc:contributor>May, Ulrich</dc:contributor> <dc:rights>deposit-license</dc:rights> <dc:contributor>Kittur, Harish</dc:contributor> <dcterms:issued>2001</dcterms:issued> <dc:creator>Calarco, Raffaella</dc:creator> <dc:contributor>Sperlich, Martin</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:56:36Z</dcterms:available> <dc:creator>Rüdiger, Ulrich</dc:creator> <dc:creator>May, Ulrich</dc:creator> </rdf:Description> </rdf:RDF>

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