Mechanisms for the generation of coherent longitudinal-optical phonons in GaAs/AlGaAs multiple quantum wells

Yee, K. J.; Lim, Y. S.; Dekorsy, Thomas; Kim, D. S.

Mechanisms for the generation of coherent longitudinal-optical phonons in GaAs/AlGaAs multiple quantum wells

Files

Mechanisms_for_the_generation_of_coherent.pdf(190.53 KB)

Date

2001

Authors

Yee, K. J.

Lim, Y. S.

Dekorsy, Thomas

Kim, D. S.

Publication type

Journal article

Published in

Physical Review Letters ; 86 (2001), 8. - pp. 1630-1633

Abstract

We show that coherent optical phonons in GaAs multiple quantum wells are generated in a completely different way as compared to bulk GaAs. Unlike in bulk GaAs where the ultrafast screening of electric fields by photogenerated charge carriers is known to be dominant, three distinctive generation mechanisms contribute simultaneously in multiple quantum wells. The interplay between impulsive Raman scattering, forbidden Raman scattering, and screening of surface electric fields, whose relative strengths are determined by laser intensity, detuning from the exciton resonance, and the barrier width, generates a rich variety of new phenomena.

Subject (DDC)

530 Physics

Cite This

ISO 690

YEE, K. J., Y. S. LIM, Thomas DEKORSY, D. S. KIM, 2001. Mechanisms for the generation of coherent longitudinal-optical phonons in GaAs/AlGaAs multiple quantum wells. In: Physical Review Letters. 86(8), pp. 1630-1633. Available under: doi: 10.1103/PhysRevLett.86.1630

BibTex

@article{Yee2001Mecha-9428,
  year={2001},
  doi={10.1103/PhysRevLett.86.1630},
  title={Mechanisms for the generation of coherent longitudinal-optical phonons in GaAs/AlGaAs multiple quantum wells},
  number={8},
  volume={86},
  journal={Physical Review Letters},
  pages={1630--1633},
  author={Yee, K. J. and Lim, Y. S. and Dekorsy, Thomas and Kim, D. S.}
}

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