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Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model

Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model

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MICARD, Gabriel, Giso HAHN, Annika ZUSCHLAG, Sven SEREN, Barbara TERHEIDEN, 2010. Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model. In: Journal of Applied Physics. 108(3), 34516. ISSN 0021-8979. eISSN 1089-7550. Available under: doi: 10.1063/1.3462447

@article{Micard2010Quant-9405, title={Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current : an advanced model}, year={2010}, doi={10.1063/1.3462447}, number={3}, volume={108}, issn={0021-8979}, journal={Journal of Applied Physics}, author={Micard, Gabriel and Hahn, Giso and Zuschlag, Annika and Seren, Sven and Terheiden, Barbara}, note={Article Number: 34516} }

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Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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