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Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet

Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet

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SKORUPA, Wolfgang, Jiaming SUN, Slawomir PRUCNAL, Lars REBOHLE, Thoralf GEBEL, Alexei N. NAZAROV, Igor N. OSIYUK, Thomas DEKORSY, Manfred HELM, 2005. Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet. In: Materials Research Society Symposium V. 866

@inproceedings{Skorupa2005earth-9345, title={Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet}, year={2005}, booktitle={Materials Research Society Symposium V}, author={Skorupa, Wolfgang and Sun, Jiaming and Prucnal, Slawomir and Rebohle, Lars and Gebel, Thoralf and Nazarov, Alexei N. and Osiyuk, Igor N. and Dekorsy, Thomas and Helm, Manfred} }

<rdf:RDF xmlns:dcterms="http://purl.org/dc/terms/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dspace="http://digital-repositories.org/ontologies/dspace/0.1.0#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:void="http://rdfs.org/ns/void#" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/9345"> <dcterms:bibliographicCitation>First publ. in: Materials Research Society Symposium V, 866 (2005)</dcterms:bibliographicCitation> <dc:contributor>Nazarov, Alexei N.</dc:contributor> <dcterms:issued>2005</dcterms:issued> <dcterms:rights rdf:resource="https://creativecommons.org/licenses/by-nc-nd/2.0/legalcode"/> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:55:43Z</dcterms:available> <dc:contributor>Gebel, Thoralf</dc:contributor> <dspace:isPartOfCollection rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dcterms:isPartOf rdf:resource="https://kops.uni-konstanz.de/rdf/resource/123456789/41"/> <dspace:hasBitstream rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9345/1/Rare_earth_ion_implantation_for_silicon_based_light_emission.pdf"/> <dc:contributor>Skorupa, Wolfgang</dc:contributor> <dc:contributor>Helm, Manfred</dc:contributor> <dc:contributor>Prucnal, Slawomir</dc:contributor> <dc:creator>Prucnal, Slawomir</dc:creator> <dc:contributor>Osiyuk, Igor N.</dc:contributor> <dc:creator>Helm, Manfred</dc:creator> <dc:rights>deposit-license</dc:rights> <dc:creator>Dekorsy, Thomas</dc:creator> <dc:creator>Rebohle, Lars</dc:creator> <dc:format>application/pdf</dc:format> <dc:creator>Osiyuk, Igor N.</dc:creator> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dc:creator>Gebel, Thoralf</dc:creator> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <dc:contributor>Sun, Jiaming</dc:contributor> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9345"/> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dcterms:hasPart rdf:resource="https://kops.uni-konstanz.de/bitstream/123456789/9345/1/Rare_earth_ion_implantation_for_silicon_based_light_emission.pdf"/> <dcterms:abstract xml:lang="eng">Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were created into the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). The silicon dioxide layer did not contain silicon nanoclusters. Efficient electroluminescence was obtained from UV to infrared with a transparent top electrode made of indium-tin oxide. The electroluminescence properties were studied with respect to the luminescence spectra, decay time, impact excitation, cross relaxation (Tb3+), and power efficiency. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies well above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Moreover, we demonstrate photo- and electroluminescence in correlation to charge trapping characteristics for Er-rich MOSLEDs with a varying silicon cluster content. Finally, application aspects to the field of biosensing will be discussed.</dcterms:abstract> <dc:creator>Nazarov, Alexei N.</dc:creator> <dcterms:title>Rare earth ion implantation for silicon based light emission : from infrared to ultraviolet</dcterms:title> <dc:creator>Skorupa, Wolfgang</dc:creator> <dc:creator>Sun, Jiaming</dc:creator> <dc:language>eng</dc:language> <dc:contributor>Rebohle, Lars</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:55:43Z</dc:date> </rdf:Description> </rdf:RDF>

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