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A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times

A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times

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XIMELLO QUIEBRAS, Jose, Helge HAVERKAMP, Giso HAHN, 2009. A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times. In: Proceedings of the 24th European PV SEC, Hamburg, 21 - 25 September 2009

@inproceedings{Ximello Quiebras2009KOH-e-934, title={A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times}, year={2009}, doi={10.4229/24thEUPVSEC2009-2CV.5.70}, booktitle={Proceedings of the 24th European PV SEC, Hamburg, 21 - 25 September 2009}, author={Ximello Quiebras, Jose and Haverkamp, Helge and Hahn, Giso} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/934"> <dc:contributor>Ximello Quiebras, Jose</dc:contributor> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:20Z</dc:date> <dc:contributor>Hahn, Giso</dc:contributor> <dc:rights>deposit-license</dc:rights> <dcterms:abstract xml:lang="eng">Texturization of monocrystalline silicon for solar cells is still an issue due to the properties of the isopropyl alcohol (IPA) in the standard Potassium Hydroxide KOH (or Sodium Hydroxide NaOH)-IPA etching solution. The low boiling point of IPA (82.4oC) is limiting etch temperature and by this processing speed. Furthermore, IPA has other disadvantages like waste recycling problems. A better alternative for IPA, not only regarding processing time, is a High Boiling Alcohol (HBA). In this paper we show, that our newly found KOH-HBA texture also gives lower reflection results than our KOH-IPA texture. Finally, we produced solar cells with both textures and current-voltage measurements are compared.</dcterms:abstract> <dc:creator>Haverkamp, Helge</dc:creator> <dcterms:issued>2009</dcterms:issued> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-22T17:52:20Z</dcterms:available> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> <dc:contributor>Haverkamp, Helge</dc:contributor> <dc:creator>Ximello Quiebras, Jose</dc:creator> <dc:language>eng</dc:language> <dc:creator>Hahn, Giso</dc:creator> <dcterms:title>A new KOH-etch solution to produce a random pyramid texture on monocrystalline silicon at elevated process temperatures and shortened process times</dcterms:title> <dcterms:bibliographicCitation>Publ. in: Proceedings of the 24th European PV SEC, Hamburg, 21-25 September 2009</dcterms:bibliographicCitation> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/934"/> </rdf:Description> </rdf:RDF>

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