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Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation

Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation

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HUSKA, Klaus, Gregor KLATT, Jurana HETTERICH, Ulf GEYER, Thomas DEKORSY, Georg BASTIAN, Uli LEMMER, 2009. Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation. In: Electronics Letters. 45(16), pp. 851-853

@article{Huska2009Large-9287, title={Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation}, year={2009}, doi={10.1049/el.2009.1648}, number={16}, volume={45}, journal={Electronics Letters}, pages={851--853}, author={Huska, Klaus and Klatt, Gregor and Hetterich, Jurana and Geyer, Ulf and Dekorsy, Thomas and Bastian, Georg and Lemmer, Uli} }

<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:bibo="http://purl.org/ontology/bibo/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dcterms="http://purl.org/dc/terms/" xmlns:xsd="http://www.w3.org/2001/XMLSchema#" > <rdf:Description rdf:about="https://kops.uni-konstanz.de/rdf/resource/123456789/9287"> <dcterms:issued>2009</dcterms:issued> <dc:language>eng</dc:language> <dc:creator>Hetterich, Jurana</dc:creator> <dc:contributor>Klatt, Gregor</dc:contributor> <dcterms:available rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:55:12Z</dcterms:available> <dc:date rdf:datatype="http://www.w3.org/2001/XMLSchema#dateTime">2011-03-24T17:55:12Z</dc:date> <dc:creator>Klatt, Gregor</dc:creator> <dc:creator>Geyer, Ulf</dc:creator> <bibo:uri rdf:resource="http://kops.uni-konstanz.de/handle/123456789/9287"/> <dc:contributor>Lemmer, Uli</dc:contributor> <dc:creator>Bastian, Georg</dc:creator> <dc:rights>deposit-license</dc:rights> <dcterms:abstract xml:lang="eng">Interference-lithography and a self-aligning angle-evaporation technique are employed to fabricate interdigitated photoconductive terahertz (THz) emitters. The devices have a large active area for high directivity and submicron spaced electrodes for high internal electric fields at low bias voltages. The fabrication process offers the advantage that only one patterning step is needed to generate three isolated metallic structures. This avoids critical alignment and reduces the fabrication effort significantly. Voltage dependent THz emission is observed from 4 V upwards.</dcterms:abstract> <dc:contributor>Huska, Klaus</dc:contributor> <dc:creator>Lemmer, Uli</dc:creator> <dc:contributor>Dekorsy, Thomas</dc:contributor> <dc:format>application/pdf</dc:format> <dcterms:rights rdf:resource="http://nbn-resolving.org/urn:nbn:de:bsz:352-20140905103416863-3868037-7"/> <dcterms:bibliographicCitation>First publ. in: Electronics Letters 45 (2009), 16, pp. 851-853</dcterms:bibliographicCitation> <dc:contributor>Bastian, Georg</dc:contributor> <dcterms:title>Large-area sub-micron gap interdigitated THz emitters fabricated by interference lithography and angle evaporation</dcterms:title> <dc:creator>Huska, Klaus</dc:creator> <dc:contributor>Geyer, Ulf</dc:contributor> <dc:creator>Dekorsy, Thomas</dc:creator> <dc:contributor>Hetterich, Jurana</dc:contributor> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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