CuGaSe2-Absorberschichten aus mehrstufigen Prozessen


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KLENK, Markus, 2001. CuGaSe2-Absorberschichten aus mehrstufigen Prozessen [Dissertation]. Konstanz: University of Konstanz

@phdthesis{Klenk2001CuGaS-9255, title={CuGaSe2-Absorberschichten aus mehrstufigen Prozessen}, year={2001}, author={Klenk, Markus}, address={Konstanz}, school={Universität Konstanz} }

<rdf:RDF xmlns:dcterms="" xmlns:dc="" xmlns:rdf="" xmlns:bibo="" xmlns:dspace="" xmlns:foaf="" xmlns:void="" xmlns:xsd="" > <rdf:Description rdf:about=""> <dcterms:alternative>CuGaSe2 absorber layers prepared by multi step processes</dcterms:alternative> <dc:rights>terms-of-use</dc:rights> <dc:contributor>Klenk, Markus</dc:contributor> <dspace:isPartOfCollection rdf:resource=""/> <dcterms:title>CuGaSe2-Absorberschichten aus mehrstufigen Prozessen</dcterms:title> <dspace:hasBitstream rdf:resource=""/> <dcterms:abstract xml:lang="eng">In this work the properties of copper- gallium- diselenide absorber layers are investigated. Main topic are thin films of the compound which are processed from stacked elemental layers of the respective elements (precursors). For characterization mainly x-ray analytical techniques were applied. It could be shown that it is problematic to get homogeneous, slightly galliumrich films. In spite of the phase width of the compound it turned out that the incorporation of gallium depends on the process temperature. For process temperatures which are allowed by the typically used substrate- molybdenum combinations practically stoichiometric copper- gallium- diselenide is formed. Excess gallium deposited on the precursor structure is nearly amorphous and accumulated in the lower region of the absorber. Temperatures of approximatly 700 °C have to be applied to get homogeneous galliumrich copper- gallium- diselenide. The use of the x-ray fluorescence allowed a direct observation of gallium losses, which are widely discussed in literature. A systematic investigation of several multi- step processes showed that such losses can occur, but only in vacuum and for temperatures which are considerably higher than the typically applied. In an alternative approach to the use of stacked elemental layers also films of binary selenides were used as precursors.</dcterms:abstract> <bibo:uri rdf:resource=""/> <dc:date rdf:datatype="">2011-03-24T17:54:55Z</dc:date> <dcterms:issued>2001</dcterms:issued> <dc:format>application/pdf</dc:format> <dcterms:hasPart rdf:resource=""/> <dcterms:rights rdf:resource=""/> <dc:language>deu</dc:language> <dc:creator>Klenk, Markus</dc:creator> <dcterms:available rdf:datatype="">2011-03-24T17:54:55Z</dcterms:available> <foaf:homepage rdf:resource="http://localhost:8080/jspui"/> <void:sparqlEndpoint rdf:resource="http://localhost/fuseki/dspace/sparql"/> <dcterms:isPartOf rdf:resource=""/> </rdf:Description> </rdf:RDF>

Dateiabrufe seit 01.10.2014 (Informationen über die Zugriffsstatistik)

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